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IPD60R520CP

IPD60R520CP
Mfr. #:
IPD60R520CP
Hersteller:
Rochester Electronics, LLC
Beschreibung:
IGBT Transistors MOSFET N-Ch 600V 6.8A DPAK-2 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD60R520CP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Tags
IPD60R520CP, IPD60R5, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 6.8A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 650V 6.8A TO-252
***ark
MOSFET, N, TO-252; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:6.8A; On State Resistance:0.52ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.8A; Package / Case:TO-252; Power Dissipation Pd:66W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-252; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:6.8A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.47ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:66W; Rodzaj obudowy tranzystora:TO-252; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:6.8A; Napięcie Vds, typ.:650V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Rodzaj tranzystora:Mocy MOSFET; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C
Teil # Mfg. Beschreibung Aktie Preis
IPD60R520CPBTMA1
DISTI # IPD60R520CPBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD60R520CPBTMA1
    DISTI # IPD60R520CPBTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD60R520CPBTMA1
      DISTI # IPD60R520CPBTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-252
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPD60R520CPATMA1
        DISTI # IPD60R520CPATMA1-ND        		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-252
        RoHS: Compliant
        Container: Tape & Reel (TR)        		Limited Supply - Call
          IPD60R520CPInfineon Technologies AGPower Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant          		4840
          • 1000:$0.7500
          • 500:$0.7900
          • 100:$0.8200
          • 25:$0.8600
          • 1:$0.9200
          IPD60R520CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252
          RoHS: Compliant          		17500
          • 1000:$0.9000
          • 500:$0.9400
          • 100:$0.9800
          • 25:$1.0300
          • 1:$1.1000
          IPD60R520CPBTMA1Infineon Technologies AGPower Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Not Compliant          		7500
          • 1000:$0.7500
          • 500:$0.7900
          • 100:$0.8200
          • 25:$0.8600
          • 1:$0.9200
          Bild Teil # Beschreibung
          IPD60R380C6ATMA1

          Mfr.#: IPD60R380C6ATMA1

          OMO.#: OMO-IPD60R380C6ATMA1

          		 MOSFET N-Ch 600V 10.6A DPAK-2
          IPD60R280P7SAUMA1

          Mfr.#: IPD60R280P7SAUMA1

          OMO.#: OMO-IPD60R280P7SAUMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 600V 12A TO252-3
          IPD60R600P7SAUMA1

          Mfr.#: IPD60R600P7SAUMA1

          OMO.#: OMO-IPD60R600P7SAUMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 600V 6A TO252-3
          IPD60R650CEAUMA1

          Mfr.#: IPD60R650CEAUMA1

          OMO.#: OMO-IPD60R650CEAUMA1-INFINEON-TECHNOLOGIES

          		 Trans MOSFET N-CH 600V 9.9A 3-Pin(2+Tab) DPAK T/R
          IPD60R460CEATMA1-CUT TAPE

          Mfr.#: IPD60R460CEATMA1-CUT TAPE

          OMO.#: OMO-IPD60R460CEATMA1-CUT-TAPE-1190

          		 Neu und Original
          IPD60R2K0C6,6R2K0C6,

          Mfr.#: IPD60R2K0C6,6R2K0C6,

          OMO.#: OMO-IPD60R2K0C6-6R2K0C6--1190

          		 Neu und Original
          IPD60R400CEATMA1 , 2SD23

          Mfr.#: IPD60R400CEATMA1 , 2SD23

          OMO.#: OMO-IPD60R400CEATMA1-2SD23-1190

          		 Neu und Original
          IPD60R460CEATMA1 , 2SD23

          Mfr.#: IPD60R460CEATMA1 , 2SD23

          OMO.#: OMO-IPD60R460CEATMA1-2SD23-1190

          		 Neu und Original
          IPD60R600P7ATMA1

          Mfr.#: IPD60R600P7ATMA1

          OMO.#: OMO-IPD60R600P7ATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 650V 6A TO252-3
          IPD60R380C6

          Mfr.#: IPD60R380C6

          OMO.#: OMO-IPD60R380C6-INFINEON-TECHNOLOGIES

          		 IGBT Transistors MOSFET N-Ch 600V 10.6A DPAK-2 CoolMOS C6
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1500
          Menge eingeben:
          Der aktuelle Preis von IPD60R520CP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          1,12 $
          1,12 $
          10
          1,07 $
          10,69 $
          100
          1,01 $
          101,25 $
          500
          0,96 $
          478,15 $
          1000
          0,90 $
          900,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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