IPP60R125P6

IPP60R125P6
Mfr. #:
IPP60R125P6
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER PRICE/PERFORM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP60R125P6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPP60R125P6 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
113 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
56 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
219 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Serie:
CoolMOS P6
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
44 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
IPP60R125P6XKSA1 SP001114648
Gewichtseinheit:
0.211644 oz
Tags
IPP60R125, IPP60R12, IPP60R1, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPP60R125P6XKSA1
DISTI # V99:2348_06377615
Infineon Technologies AGTrans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
500
  • 1:$3.5088
IPP60R125P6XKSA1
DISTI # V36:1790_06377615
Infineon Technologies AGTrans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
  • 5000000:$1.8200
  • 50000:$1.9940
  • 500:$2.3300
IPP60R125P6XKSA1
DISTI # IPP60R125P6XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$2.7334
IPP60R125P6
DISTI # 32634958
Infineon Technologies AG0500
  • 500:$3.0983
  • 100:$3.4680
  • 50:$3.7230
  • 10:$4.5263
  • 5:$5.6227
IPP60R125P6XKSA1
DISTI # 33157325
Infineon Technologies AGTrans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
500
  • 500:$2.7480
  • 250:$3.0730
  • 100:$3.2550
  • 10:$3.4800
  • 3:$4.6750
IPP60R125P6XKSA1
DISTI # IPP60R125P6
Infineon Technologies AGTrans MOSFET N-CH 650V 30A 3-Pin TO-220 Tube (Alt: IPP60R125P6)
RoHS: Compliant
Min Qty: 500
Container: Tube
Asia - 2500
  • 25000:$2.2727
  • 12500:$2.3062
  • 5000:$2.3406
  • 2500:$2.3761
  • 1500:$2.4503
  • 1000:$2.5293
  • 500:$2.6137
IPP60R125P6XKSA1
DISTI # IPP60R125P6XKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 30A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP60R125P6XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 5000:$1.8900
  • 2000:$1.9900
  • 3000:$1.9900
  • 1000:$2.0900
  • 500:$2.1900
IPP60R125P6XKSA1
DISTI # SP001114648
Infineon Technologies AGTrans MOSFET N-CH 650V 30A 3-Pin TO-220 Tube (Alt: SP001114648)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€1.6900
  • 500:€1.7900
  • 100:€1.8900
  • 25:€1.9900
  • 50:€1.9900
  • 10:€2.0900
  • 1:€2.2900
IPP60R125P6XKSA1
DISTI # 12AC9730
Infineon Technologies AGMOSFET, N-CH, 600V, 30A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.113ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes0
  • 500:$3.1300
  • 250:$3.4500
  • 100:$3.6100
  • 50:$3.7800
  • 25:$3.9400
  • 10:$4.1100
  • 1:$4.7800
IPP60R125P6XKSA1
DISTI # 726-IPP60R125P6XKSA1
Infineon Technologies AGMOSFET HIGH POWER PRICE/PERFORM
RoHS: Compliant
0
  • 1:$4.1500
  • 10:$3.5200
  • 100:$3.0500
  • 250:$2.9000
  • 500:$2.6000
  • 1000:$2.1900
  • 2500:$2.0800
IPP60R125P6
DISTI # 726-IPP60R125P6
Infineon Technologies AGMOSFET HIGH POWER PRICE/PERFORM
RoHS: Compliant
0
  • 1:$4.1500
  • 10:$3.5200
  • 100:$3.0500
  • 250:$2.9000
  • 500:$2.6000
IPP60R125P6XKSA1Infineon Technologies AGSingle N-Channel 600 V 125 mOhm 56 nC CoolMOS Power Mosfet - TO-220-3
RoHS: Not Compliant
25Tube
  • 500:$1.8400
IPP60R125P6XKSA1
DISTI # 2709897
Infineon Technologies AGMOSFET, N-CH, 600V, 30A, TO-2200
  • 500:£1.9600
  • 250:£2.1800
  • 100:£2.3000
  • 10:£2.6500
  • 1:£3.4900
IPP60R125P6XKSA1
DISTI # 2709897
Infineon Technologies AGMOSFET, N-CH, 600V, 30A, TO-220
RoHS: Compliant
0
  • 1000:$3.6700
  • 500:$4.3500
  • 100:$5.3700
  • 10:$6.5400
  • 1:$7.3200
Bild Teil # Beschreibung
SMCJ150CA

Mfr.#: SMCJ150CA

OMO.#: OMO-SMCJ150CA

TVS Diodes / ESD Suppressors 150volts 5uA 6.2 Amps Bi-Dir
SMDJ120A

Mfr.#: SMDJ120A

OMO.#: OMO-SMDJ120A

TVS Diodes / ESD Suppressors 3kW 120V 5% Uni-Directional
FCP125N60E

Mfr.#: FCP125N60E

OMO.#: OMO-FCP125N60E

MOSFET 600V 29A N-Chnl SuperFET Easy-Drive
STP28N60M2

Mfr.#: STP28N60M2

OMO.#: OMO-STP28N60M2

MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2
FCP25N60N-F102

Mfr.#: FCP25N60N-F102

OMO.#: OMO-FCP25N60N-F102

MOSFET 600V N-CHAN SupreMOS
FCP170N60

Mfr.#: FCP170N60

OMO.#: OMO-FCP170N60

MOSFET SF2 600V 170MOHM F TO220
FCP22N60N

Mfr.#: FCP22N60N

OMO.#: OMO-FCP22N60N

MOSFET 600V N-Channel SupreMOS
FCP165N60E

Mfr.#: FCP165N60E

OMO.#: OMO-FCP165N60E

MOSFET 600V 23A N-Chnl SuperFET Easy-Drive
SMDJ120A

Mfr.#: SMDJ120A

OMO.#: OMO-SMDJ120A-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors TVS Diode SMC Suf MT
SMCJ150CA

Mfr.#: SMCJ150CA

OMO.#: OMO-SMCJ150CA-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors 150volts 5uA 6.2 Amps Bi-Di
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IPP60R125P6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,15 $
4,15 $
10
3,52 $
35,20 $
100
3,05 $
305,00 $
250
2,90 $
725,00 $
500
2,60 $
1 300,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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