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BSD235NH6327XT

BSD235NH6327XT
Mfr. #:
BSD235NH6327XT
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 20V 950mA SOT-363-6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSD235NH6327XT Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSD235NH6327XT Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-363-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
950 mA
Rds On - Drain-Source-Widerstand:
266 mOhms, 266 mOhms
Vgs th - Gate-Source-Schwellenspannung:
700 mV
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
320 pC, 320 pC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
500 mW (1/2 W)
Aufbau:
Dual
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Höhe:
0.9 mm
Länge:
2 mm
Serie:
BSD235
Transistortyp:
2 N-Channel
Breite:
1.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
2 S, 2 S
Abfallzeit:
1.2 ns, 1.2 ns
Produktart:
MOSFET
Anstiegszeit:
3.6 ns, 3.6 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
4.5 ns, 4.5 ns
Typische Einschaltverzögerungszeit:
3.8 ns, 3.8 ns
Teil # Aliase:
BSD235NH6327 BSD235NH6327XTSA1 SP000917652
Gewichtseinheit:
0.000265 oz
Tags
BSD235NH, BSD235N, BSD23, BSD2, BSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET 2N-CH 20V 0.95A SOT363
*** Electronic Components
MOSFET N-Ch 20V 950mA SOT-363-6
***et Japan
Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R
***ure Electronics
DMN3190LDW: 30 V 190 mOhm Dual N-Channel Enhancement Mode Mosfet - SOT-363
*** Source Electronics
Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 1A SOT363
***ark
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:1A; Continuous Drain Current Id P Channel:1A RoHS Compliant: Yes
***el Electronic
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~150°C TJ 190m Ω @ 1.3A, 10V 2.8V @ 250μA MOSFET 2N-CH 30V 1A SOT363
***nell
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 320mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***et
Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R
***ure Electronics
Dual N-Channel 30 V 190 mOhm Enhancement Mode Mosfet - SOT-363
***(Formerly Allied Electronics)
MOSFET Dual N-Ch 30V 1A Enhanc. SOT363
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ark
Mosfet, Dual, N-Ch, 30V, 1A Rohs Compliant: Yes
***p One Stop Global
Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R
***ure Electronics
Dual N & P-Channel 20 V 450 mOhm Enhancement Mode Mosfet
***ment14 APAC
MOSFET, N & P CH, 20V, SOT-363; Transistor Polarity:N and Complement; Continuous Drain Current Id:845mA; Source Voltage Vds:20V; On
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 1.066A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N & P CH, 20V, SOT-363; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 845mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 330mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
Small Signal MOSFET 8V 775mA 300 mOhm Dual P-Channel SC−88/SC70−6/SOT−363 with ESD Protection
***-Wing Technology
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 4nC @ 4.5V 775mA 270mW 23ns
***et
Transistor MOSFET Array Dual P-CH 8V 0.775A 6-Pin SC-88 T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-8V; Continuous Drain Current, Id:0.775A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:-4.5V ;RoHS Compliant: Yes
***emi
Small Signal MOSFET 8V 775mA 300 mOhm Dual P-Channel SC−88/SC70−6/SOT−363 with ESD Protection
***ser
MOSFETs- Power and Small Signal 8V Dual P-Channel No-Cancel/No-Return
***ponent Stockers USA
775 mA 8 V 2 CHANNEL P-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Small Signal Field-Effect Transistor, 0.775A I(D), 8V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***i-Key
MOSFET 2P-CH 8V 0.775A SOT-363
***emi
Small Signal MOSFET 8V 775mA 300 mOhm Dual P-Channel SC−88/SC70−6/SOT−363 with ESD Protection
***ser
MOSFETs- Power and Small Signal 8V Dual P-Channel ESD Protection
***r Electronics
Small Signal Field-Effect Transistor, 0.775A I(D), 8V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***i-Key
MOSFET 2P-CH 8V 0.775A SOT-363
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BSD235NH6327XTSA1
DISTI # BSD235NH6327XTSA1CT-ND		Infineon Technologies AGMOSFET 2N-CH 20V 0.95A SOT363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		270In Stock
  • 1000:$0.1341
  • 500:$0.1749
  • 100:$0.2496
  • 10:$0.3590
  • 1:$0.4500
BSD235NH6327XTSA1
DISTI # BSD235NH6327XTSA1DKR-ND		Infineon Technologies AGMOSFET 2N-CH 20V 0.95A SOT363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		270In Stock
  • 1000:$0.1341
  • 500:$0.1749
  • 100:$0.2496
  • 10:$0.3590
  • 1:$0.4500
BSD235NH6327XTSA1
DISTI # BSD235NH6327XTSA1TR-ND		Infineon Technologies AGMOSFET 2N-CH 20V 0.95A SOT363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1203
BSD235NH6327XTSA1
DISTI # SP000917652		Infineon Technologies AGTrans MOSFET N-CH 20V 0.95A 6-Pin SOT-363 T/R (Alt: SP000917652)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 15000
  • 3000:€0.1019
  • 6000:€0.0789
  • 12000:€0.0639
  • 18000:€0.0539
  • 30000:€0.0509
BSD235NH6327XTSA1
DISTI # BSD235NH6327XTSA1		Infineon Technologies AGTrans MOSFET N-CH 20V 0.95A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD235NH6327XTSA1)
RoHS: Compliant
Min Qty: 9000
Container: Reel		Americas - 0
  • 9000:$0.0689
  • 15000:$0.0659
  • 24000:$0.0639
  • 45000:$0.0619
  • 90000:$0.0599
BSD235NH6327XTSA1
DISTI # 46AC0522		Infineon Technologies AGMOSFET, DUAL N CH, 20V, 0.95A, SOT-363-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:950mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.266ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage RoHS Compliant: Yes0
  • 1000:$0.1080
  • 500:$0.1200
  • 250:$0.1320
  • 100:$0.1440
  • 50:$0.1850
  • 25:$0.2250
  • 10:$0.2660
  • 1:$0.3500
BSD235NH6327XTSA1
DISTI # 726-BSD235NH6327XTS		Infineon Technologies AGMOSFET N-Ch 20V 950mA SOT-363-6
RoHS: Compliant		18443
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 3000:$0.0930
BSD235NH6327XT
DISTI # 726-BSD235NH6327XTSA		Infineon Technologies AGMOSFET N-Ch 20V 950mA SOT-363-6
RoHS: Compliant		8008
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 3000:$0.0930
BSD235N H6327
DISTI # 726-BSD235NH6327		Infineon Technologies AGMOSFET N-Ch 20V 950mA SOT-363-6
RoHS: Compliant		0
  • 1:$0.3700
  • 10:$0.2800
  • 100:$0.1600
  • 1000:$0.1200
  • 3000:$0.1000
BSD235NH6327XTSA1
DISTI # 8270115		Infineon Technologies AGINFINEON TRANS BSD235NH6327XT, RL9000
  • 6000:£0.0640
  • 3000:£0.0670
  • 1000:£0.0780
  • 250:£0.1060
BSD235NH6327XTSA1
DISTI # 2443477		Infineon Technologies AGMOSFET, DUAL N CH, 20V, 0.95A, SOT-363-6
RoHS: Compliant		0
  • 3000:$0.1590
  • 1000:$0.1910
  • 100:$0.2540
  • 10:$0.4440
  • 1:$0.5860
BSD235NH6327XTSA1
DISTI # 2443477		Infineon Technologies AGMOSFET, DUAL N CH, 20V, 0.95A, SOT-363-6
RoHS: Compliant		0
  • 100:£0.1450
  • 25:£0.2840
  • 5:£0.2950
BSD235NH6327XTSA1
DISTI # XSKDRABS0029373		Infineon Technologies AG 
RoHS: Compliant		12000
  • 12000:$0.0779
  • 9000:$0.0834
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Verfügbarkeit
Aktie:
12
Auf Bestellung:
1995
Menge eingeben:
Der aktuelle Preis von BSD235NH6327XT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,34 $
0,34 $
10
0,27 $
2,66 $
100
0,14 $
14,40 $
1000
0,11 $
108,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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