 | | | |
| PartNumber | BSD235NH6327XT | BSD235N H6327 | BSD235N L6327 |
| Description | MOSFET N-Ch 20V 950mA SOT-363-6 | MOSFET N-Ch 20V 950mA SOT-363-6 | MOSFET N-Ch 20V 950mA SOT-363-6 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | SOT-363-6 | SOT-363-6 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 950 mA | 950 mA | 950 mA |
| Rds On Drain Source Resistance | 266 mOhms, 266 mOhms | 266 mOhms, 266 mOhms | 350 mOhms |
| Vgs th Gate Source Threshold Voltage | 700 mV | 700 mV | - |
| Vgs Gate Source Voltage | 12 V | 12 V | 12 V |
| Qg Gate Charge | 320 pC, 320 pC | 320 pC, 320 pC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Height | 0.9 mm | 0.9 mm | 0.9 mm |
| Length | 2 mm | 2 mm | 2 mm |
| Series | BSD235 | BSD235 | BSD235 |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Width | 1.25 mm | 1.25 mm | 1.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 2 S, 2 S | 2 S, 2 S | - |
| Fall Time | 1.2 ns, 1.2 ns | 1.2 ns, 1.2 ns | 3.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3.6 ns, 3.6 ns | 3.6 ns, 3.6 ns | 3.6 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 4.5 ns, 4.5 ns | 4.5 ns, 4.5 ns | 4.5 ns |
| Typical Turn On Delay Time | 3.8 ns, 3.8 ns | 3.8 ns, 3.8 ns | 3.8 ns |
| Part # Aliases | BSD235NH6327 BSD235NH6327XTSA1 SP000917652 | BSD235NH6327XTSA1 SP000917652 | BSD235NL6327HTSA1 |
| Unit Weight | 0.000265 oz | 0.000265 oz | 0.000265 oz |
| Product | - | - | MOSFET Small Signal |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSD235NH6327XT | MOSFET N-Ch 20V 950mA SOT-363-6 | |
| BSD235N H6327 | MOSFET N-Ch 20V 950mA SOT-363-6 | ||
| BSD235NH6327XTSA1 | MOSFET N-Ch 20V 950mA SOT-363-6 | ||
| BSD235N L6327 | MOSFET 2N-CH 20V 0.95A SOT363 | ||
| BSD235NH6327XTSA1 | MOSFET 2N-CH 20V 0.95A SOT363 | ||
Infineon Technologies |
BSD235N L6327 | MOSFET N-Ch 20V 950mA SOT-363-6 | |
| BSD235N | Neu und Original | ||
| BSD235N H6327 | Trans MOSFET N-CH 20V 0.95A 6-Pin SOT-363 T/R (Alt: BSD235N H6327) | ||
| BSD235NH6327 | Neu und Original | ||
| BSD235NL6327 | Neu und Original | ||
| BSD235NH6327XT | IGBT Transistors MOSFET N-Ch 20V 950mA SOT-363-6 |