BSD235NH6327XT vs BSD235N H6327 vs BSD235NH6327XTSA1


PartNumber	BSD235NH6327XT	BSD235N H6327	BSD235NH6327XTSA1
Description	MOSFET N-Ch 20V 950mA SOT-363-6	MOSFET N-Ch 20V 950mA SOT-363-6	MOSFET N-Ch 20V 950mA SOT-363-6
Manufacturer	Infineon	Infineon	Infineon
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-363-6	SOT-363-6	SOT-363-6
Number of Channels	2 Channel	2 Channel	2 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	20 V	20 V	20 V
Id Continuous Drain Current	950 mA	950 mA	950 mA
Rds On Drain Source Resistance	266 mOhms, 266 mOhms	266 mOhms, 266 mOhms	266 mOhms, 266 mOhms
Vgs th Gate Source Threshold Voltage	700 mV	700 mV	700 mV
Vgs Gate Source Voltage	12 V	12 V	12 V
Qg Gate Charge	320 pC, 320 pC	320 pC, 320 pC	320 pC, 320 pC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	500 mW (1/2 W)	500 mW (1/2 W)	500 mW (1/2 W)
Configuration	Dual	Dual	Dual
Channel Mode	Enhancement	Enhancement	Enhancement
Qualification	AEC-Q101	AEC-Q101	AEC-Q101
Packaging	Reel	Reel	Reel
Height	0.9 mm	0.9 mm	0.9 mm
Length	2 mm	2 mm	2 mm
Series	BSD235	BSD235	-
Transistor Type	2 N-Channel	2 N-Channel	2 N-Channel
Width	1.25 mm	1.25 mm	1.25 mm
Brand	Infineon Technologies	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	2 S, 2 S	2 S, 2 S	2 S, 2 S
Fall Time	1.2 ns, 1.2 ns	1.2 ns, 1.2 ns	1.2 ns, 1.2 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	3.6 ns, 3.6 ns	3.6 ns, 3.6 ns	3.6 ns, 3.6 ns
Factory Pack Quantity	3000	3000	3000
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	4.5 ns, 4.5 ns	4.5 ns, 4.5 ns	4.5 ns, 4.5 ns
Typical Turn On Delay Time	3.8 ns, 3.8 ns	3.8 ns, 3.8 ns	3.8 ns, 3.8 ns
Part # Aliases	BSD235NH6327 BSD235NH6327XTSA1 SP000917652	BSD235NH6327XTSA1 SP000917652	BSD235N H6327 SP000917652
Unit Weight	0.000265 oz	0.000265 oz	0.000265 oz