IPD65R400CEAUMA1

IPD65R400CEAUMA1
Mfr. #:
IPD65R400CEAUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET CONSUMER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD65R400CEAUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPD65R400CEAUMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
15.1 A
Rds On - Drain-Source-Widerstand:
400 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
39 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
118 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS CE
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
8 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
57 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
IPD65R400CE SP001466800
Gewichtseinheit:
0.011993 oz
Tags
IPD65R4, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
Single N-Channel 650 V 400 mOhm 39 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 650V, 15.1A, To-252 Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Teil # Mfg. Beschreibung Aktie Preis
IPD65R400CEAUMA1
DISTI # V72:2272_13979488
Infineon Technologies AGTrans MOSFET N-CH 650V 15.1A 3-Pin(2+Tab) DPAK T/R0
    IPD65R400CEAUMA1
    DISTI # V36:1790_13979488
    Infineon Technologies AGTrans MOSFET N-CH 650V 15.1A 3-Pin(2+Tab) DPAK T/R0
    • 2500000:$0.4184
    • 1250000:$0.4188
    • 250000:$0.4477
    • 25000:$0.4989
    • 2500:$0.5075
    IPD65R400CEAUMA1
    DISTI # IPD65R400CEAUMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 650V TO-252
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    On Order
    • 25000:$0.3826
    • 12500:$0.3867
    • 5000:$0.4018
    • 2500:$0.4229
    IPD65R400CEAUMA1
    DISTI # IPD65R400CEAUMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 650V TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$0.4667
    • 500:$0.5912
    • 100:$0.7156
    • 10:$0.9180
    • 1:$1.0300
    IPD65R400CEAUMA1
    DISTI # IPD65R400CEAUMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 650V TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$0.4667
    • 500:$0.5912
    • 100:$0.7156
    • 10:$0.9180
    • 1:$1.0300
    IPD65R400CEAUMA1
    DISTI # IPD65R400CEAUMA1
    Infineon Technologies AGTrans MOSFET N-CH 700V 15.1A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R400CEAUMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.3649
    • 15000:$0.3719
    • 10000:$0.3849
    • 5000:$0.3989
    • 2500:$0.4139
    IPD65R400CEAUMA1
    DISTI # SP001466800
    Infineon Technologies AGTrans MOSFET N-CH 700V 15.1A 3-Pin TO-252 T/R (Alt: SP001466800)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 25000:€0.3419
    • 15000:€0.3679
    • 10000:€0.3989
    • 5000:€0.4349
    • 2500:€0.5319
    IPD65R400CEAUMA1
    DISTI # 34AC1686
    Infineon Technologies AGMOSFET, N-CH, 650V, 15.1A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:15.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.36ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes625
    • 1000:$0.4360
    • 500:$0.5520
    • 250:$0.5890
    • 100:$0.6250
    • 50:$0.6880
    • 25:$0.7510
    • 10:$0.8140
    • 1:$0.9490
    IPD65R400CEAUMA1
    DISTI # 726-IPD65R400CEAUMA1
    Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant
    3521
    • 1:$0.9400
    • 10:$0.8060
    • 100:$0.6190
    • 500:$0.5470
    • 1000:$0.4320
    IPD65R400CEAUMA1
    DISTI # 2781175
    Infineon Technologies AGMOSFET, N-CH, 650V, 15.1A, TO-252
    RoHS: Compliant
    2305
    • 5000:$0.5810
    • 1000:$0.6120
    • 500:$0.6480
    • 250:$0.7490
    • 100:$0.8870
    • 25:$1.0900
    • 5:$1.2600
    IPD65R400CEAUMA1
    DISTI # 2781175
    Infineon Technologies AGMOSFET, N-CH, 650V, 15.1A, TO-2522297
    • 100:£0.5910
    • 10:£0.8380
    • 1:£1.0300
    Bild Teil # Beschreibung
    GRF5020

    Mfr.#: GRF5020

    OMO.#: OMO-GRF5020

    RF Amplifier .01-6GHz Gain 17dB OP1dB 30.5dBm
    NCL30170ADR2G

    Mfr.#: NCL30170ADR2G

    OMO.#: OMO-NCL30170ADR2G

    LED Lighting Drivers DACD FOR LED LIGHT
    IPD60R180P7SAUMA1

    Mfr.#: IPD60R180P7SAUMA1

    OMO.#: OMO-IPD60R180P7SAUMA1

    MOSFET CONSUMER
    STD11N60M2-EP

    Mfr.#: STD11N60M2-EP

    OMO.#: OMO-STD11N60M2-EP

    MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package
    EKXL451ELL180MJ25S

    Mfr.#: EKXL451ELL180MJ25S

    OMO.#: OMO-EKXL451ELL180MJ25S

    Aluminum Electrolytic Capacitors - Radial Leaded 18uF 20% 450V Long Life
    0ZRE0055FF1A

    Mfr.#: 0ZRE0055FF1A

    OMO.#: OMO-0ZRE0055FF1A

    Resettable Fuses - PPTC
    GRM31CR61E476ME44K

    Mfr.#: GRM31CR61E476ME44K

    OMO.#: OMO-GRM31CR61E476ME44K-MURATA-ELECTRONICS

    Multilayer Ceramic Capacitors MLCC - SMD/SMT
    STD11N60M2-EP

    Mfr.#: STD11N60M2-EP

    OMO.#: OMO-STD11N60M2-EP-STMICROELECTRONICS

    N-CHANNEL 600 V, 0.550 OHM TYP.,
    GRF5020

    Mfr.#: GRF5020

    OMO.#: OMO-GRF5020-1152

    RF Amplifier .01-6GHz Gain 17dB OP1dB 30.5dBm
    IPD60R180P7SAUMA1

    Mfr.#: IPD60R180P7SAUMA1

    OMO.#: OMO-IPD60R180P7SAUMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V 18A TO252-3
    Verfügbarkeit
    Aktie:
    11
    Auf Bestellung:
    1994
    Menge eingeben:
    Der aktuelle Preis von IPD65R400CEAUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,94 $
    0,94 $
    10
    0,81 $
    8,06 $
    100
    0,62 $
    61,90 $
    500
    0,55 $
    273,50 $
    1000
    0,43 $
    432,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    Top