NGTB35N65FL2WG

NGTB35N65FL2WG
Mfr. #:
NGTB35N65FL2WG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 650V/35A FAST IGBT FSII T
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB35N65FL2WG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
NGTB35N65FL2WG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
ON Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247
Aufbau
Single
Leistung max
300W
Reverse-Recovery-Time-trr
68ns
Strom-Kollektor-Ic-Max
70A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
120A
Vce-on-Max-Vge-Ic
2V @ 15V, 35A
Schaltenergie
840μJ (on), 280μJ (off)
Gate-Gebühr
125nC
Td-ein-aus-25°C
72ns/132ns
Testbedingung
400V, 35A, 10 Ohm, 15V
Pd-Verlustleistung
300 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
2.2 V
Kontinuierlicher Kollektorstrom-bei-25-C
70 A
Gate-Emitter-Leckstrom
200 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
70 A
Tags
NGTB35, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop II Series IGBTs
ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WGOS-ND
ON SemiconductorIGBT 650V 70A 300W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
107In Stock
  • 1020:$1.6464
  • 510:$1.9522
  • 120:$2.2932
  • 30:$2.6460
  • 1:$3.1200
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N65FL2WG)
Min Qty: 202
Container: Bulk
Americas - 0
  • 202:$1.5900
  • 204:$1.5900
  • 406:$1.4900
  • 1010:$1.4900
  • 2020:$1.4900
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N65FL2WG)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 0
  • 1:$1.3900
  • 10:$1.3900
  • 25:$1.3900
  • 50:$1.3900
  • 100:$1.3900
  • 500:$1.3900
  • 1000:$1.2900
NGTB35N65FL2WG.
DISTI # 61AC1092
ON SemiconductorDC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes21
  • 1000:$1.2900
  • 1:$1.3900
NGTB35N65FL2WG
DISTI # 70547360
ON SemiconductorNGTB35N65FL2WG,IGBT Transistor,70 A 650 V,1MHz,3-Pin TO-247
RoHS: Compliant
0
  • 2:$2.9600
  • 20:$2.8200
  • 50:$2.6800
  • 100:$2.5500
  • 200:$2.4200
NGTB35N65FL2WG
DISTI # 863-NGTB35N65FL2WG
ON SemiconductorIGBT Transistors 650V/35A FAST IGBT FSII T
RoHS: Compliant
901
  • 1:$2.9700
  • 10:$2.5200
  • 100:$2.1900
  • 250:$2.0800
  • 500:$1.8600
  • 1000:$1.5700
  • 2500:$1.4900
  • 5000:$1.4400
NGTB35N65FL2WGON SemiconductorInsulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant
210
  • 1000:$1.6300
  • 500:$1.7200
  • 100:$1.7900
  • 25:$1.8700
  • 1:$2.0100
NGTB35N65FL2WG
DISTI # 8427898P
ON SemiconductorIGBT FIELD STOP II 650V 35A DIODE TO247, TU284
  • 40:£1.7950
  • 20:£1.8900
NGTB35N65FL2WGON Semiconductor 2361
    Bild Teil # Beschreibung
    NGTB35N65FL2WG

    Mfr.#: NGTB35N65FL2WG

    OMO.#: OMO-NGTB35N65FL2WG

    IGBT Transistors 650V/35A FAST IGBT FSII T
    NGTB35N60FL2WG

    Mfr.#: NGTB35N60FL2WG

    OMO.#: OMO-NGTB35N60FL2WG

    IGBT Transistors 600V/35A FAST IGBT FSII T
    NGTB35N65FL2WG

    Mfr.#: NGTB35N65FL2WG

    OMO.#: OMO-NGTB35N65FL2WG-ON-SEMICONDUCTOR

    IGBT Transistors 650V/35A FAST IGBT FSII T
    NGTB35N60FL2WG

    Mfr.#: NGTB35N60FL2WG

    OMO.#: OMO-NGTB35N60FL2WG-ON-SEMICONDUCTOR

    IGBT Transistors 600V/35A FAST IGBT FSII T
    NGTB35N60FL2W

    Mfr.#: NGTB35N60FL2W

    OMO.#: OMO-NGTB35N60FL2W-1190

    Neu und Original
    NGTB35N65FL2

    Mfr.#: NGTB35N65FL2

    OMO.#: OMO-NGTB35N65FL2-1190

    Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von NGTB35N65FL2WG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,13 $
    2,13 $
    10
    2,02 $
    20,24 $
    100
    1,92 $
    191,70 $
    500
    1,81 $
    905,25 $
    1000
    1,70 $
    1 704,00 $
    Beginnen mit
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