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NGTB35N60FL2WG

NGTB35N60FL2WG
Mfr. #:
NGTB35N60FL2WG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 600V/35A FAST IGBT FSII T
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB35N60FL2WG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB35N60FL2WG DatasheetNGTB35N60FL2WG Datasheet (P4-P6)NGTB35N60FL2WG Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
NGTB35N60FL2WG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2.2 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
70 A
Pd - Verlustleistung:
300 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
70 A
Marke:
ON Semiconductor
Gate-Emitter-Leckstrom:
200 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
1.340411 oz
Tags
NGTB35, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube
***ied Electronics & Automation
NGTB35N60FL2WG; IGBT Transistor; 70 A 600 V; 1MHz; 3-Pin TO-247
***nell
600V/35A FAST IGBT FSII T; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
Field Stop II Series IGBTs
ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB35N60FL2WG
DISTI # V99:2348_07286008		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		28
  • 500:$2.4110
  • 250:$2.6690
  • 100:$2.8160
  • 10:$3.1950
  • 1:$4.0403
NGTB35N60FL2WG
DISTI # NGTB35N60FL2WGOS-ND		ON SemiconductorIGBT 600V 70A 300W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2520:$2.2147
  • 510:$2.7572
  • 120:$3.2389
  • 30:$3.7373
  • 10:$3.9530
  • 1:$4.4000
NGTB35N60FL2WG
DISTI # 25862784		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		28
  • 500:$2.5918
  • 250:$2.8692
  • 100:$3.0272
  • 10:$3.4346
  • 3:$3.9485
NGTB35N60FL2WG
DISTI # NGTB35N60FL2WG		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N60FL2WG)
RoHS: Compliant
Min Qty: 30
Container: Tube		Americas - 10
  • 300:$1.9530
  • 150:$2.0024
  • 90:$2.0281
  • 60:$2.0544
  • 30:$2.0678
NGTB35N60FL2WG
DISTI # NGTB35N60FL2WG		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube (Alt: NGTB35N60FL2WG)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.7900
  • 100:€1.9900
  • 500:€1.9900
  • 50:€2.0900
  • 25:€2.1900
  • 10:€2.2900
  • 1:€2.4900
NGTB35N60FL2WG
DISTI # NGTB35N60FL2WG		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N60FL2WG)
Min Qty: 143
Container: Bulk		Americas - 0
  • 1430:$2.0900
  • 286:$2.1900
  • 429:$2.1900
  • 715:$2.1900
  • 143:$2.2900
NGTB35N60FL2WG.
DISTI # 29AC8927		ON SemiconductorDC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes0
  • 300:$1.9800
  • 150:$2.0400
  • 62:$2.0600
  • 32:$2.0900
  • 1:$2.1000
NGTB35N60FL2WG
DISTI # 70600202		ON SemiconductorNGTB35N60FL2WG,IGBT Transistor,70 A 600 V,1MHz,3-Pin TO-247
RoHS: Compliant		0
  • 2:$2.9900
  • 10:$2.8400
  • 20:$2.7000
  • 50:$2.5600
  • 100:$2.4300
NGTB35N60FL2WG
DISTI # 863-NGTB35N60FL2WG		ON SemiconductorIGBT Transistors 600V/35A FAST IGBT FSII T
RoHS: Compliant		28
  • 1:$4.1800
  • 10:$3.5500
  • 100:$3.0800
  • 250:$2.9200
  • 500:$2.6200
NGTB35N60FL2WGON SemiconductorInsulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel
RoHS: Compliant		3510
  • 1000:$2.3200
  • 500:$2.4400
  • 100:$2.5400
  • 25:$2.6500
  • 1:$2.8500
NGTB35N60FL2WG
DISTI # 8427894P		ON SemiconductorIGBT FIELD STOP II 600V 35A DIODE TO247, TU32
  • 100:£1.6350
  • 50:£1.8100
  • 20:£1.8500
  • 10:£1.8900
NGTB35N60FL2WG
DISTI # 2452036		ON Semiconductor600V/35A FAST IGBT FSII T
RoHS: Compliant		0
  • 500:$4.0300
  • 250:$4.4900
  • 100:$4.7400
  • 10:$5.4600
  • 1:$6.4300
NGTB35N60FL2WG
DISTI # 2452036		ON Semiconductor600V/35A FAST IGBT FSII T
RoHS: Compliant		0
  • 500:£2.0100
  • 250:£2.2400
  • 100:£2.3600
  • 10:£2.7200
  • 1:£3.5800
Bild Teil # Beschreibung
SI8238BD-D-IS

Mfr.#: SI8238BD-D-IS

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DZT5551-13

Mfr.#: DZT5551-13

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C3M0280090J

Mfr.#: C3M0280090J

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C3M0065090J

Mfr.#: C3M0065090J

OMO.#: OMO-C3M0065090J

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C3M0120090J

Mfr.#: C3M0120090J

OMO.#: OMO-C3M0120090J

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C3M0120090D

Mfr.#: C3M0120090D

OMO.#: OMO-C3M0120090D

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FRDM-KL25Z

Mfr.#: FRDM-KL25Z

OMO.#: OMO-FRDM-KL25Z-NXP-SEMICONDUCTORS

 FREEDOM KL1X/KL2X DEV EVAL BRD
C3M0120090D

Mfr.#: C3M0120090D

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C3M0120090J

Mfr.#: C3M0120090J

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Verfügbarkeit
Aktie:
598
Auf Bestellung:
2581
Menge eingeben:
Der aktuelle Preis von NGTB35N60FL2WG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,18 $
4,18 $
10
3,55 $
35,50 $
100
3,08 $
308,00 $
250
2,92 $
730,00 $
500
2,62 $
1 310,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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