SI4686DY-T1-E3

Mfr. #:: SI4686DY-T1-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI4686DY-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4686DY-T1-E3 Datasheet SI4686DY-T1-E3 Datasheet (P4-P6)SI4686DY-T1-E3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:: SI4686DY-T1-E3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SO-8

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 1.75 mm

Länge:: 4.9 mm

Serie:: SI4

Breite:: 3.9 mm

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Teil # Aliase:: SI4686DY-E3

Gewichtseinheit:: 0.006596 oz

Tags: SI4686DY-T1, SI4686DY-T, SI4686, SI468, SI46, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4686DY-T1-E3 Bewertungen und Rezensionen

A***v

Excellent. Recommended.

2019-04-15

L***r

All yak head, super.

2019-05-20

O***n

Ringing as a diode, not igbt, in the work to check until you took a chance.

2019-04-26

SI4686DY-T1-E3 Beschreibung

***ure Electronics: Single N-Channel 30 V 9.5 mOhms Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18200mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:3W ;RoHS Compliant: Yes

***nell: MOSFET, N CH, 30V, 18.2A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:18.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-

SI4686DY-T1-E3 Mehr Informationen

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI4686DY-T1-E3 DISTI # V72:2272_09215583	Vishay Intertechnologies	Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R RoHS: Compliant	375	250:$0.8146 100:$0.8235 25:$0.9485 10:$1.0539 1:$1.2997
SI4686DY-T1-E3 DISTI # V36:1790_09215583	Vishay Intertechnologies	Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R RoHS: Compliant	0	2500:$0.6136
SI4686DY-T1-E3 DISTI # SI4686DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4501In Stock	1000:$0.5389 500:$0.6826 100:$0.8263 10:$1.0600 1:$1.1900
SI4686DY-T1-E3 DISTI # SI4686DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4501In Stock	1000:$0.5389 500:$0.6826 100:$0.8263 10:$1.0600 1:$1.1900
SI4686DY-T1-E3 DISTI # SI4686DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	12500:$0.4465 5000:$0.4639 2500:$0.4883
SI4686DY-T1-E3 DISTI # 25789852	Vishay Intertechnologies	Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R RoHS: Compliant	375	12:$1.2997
SI4686DY-T1-E3 DISTI # SI4686DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4686DY-T1-E3 DISTI # SI4686DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2629 15000:€0.2829 10000:€0.3059 5000:€0.3559 2500:€0.5219
SI4686DY-T1-E3 DISTI # SI4686DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.4769 15000:$0.4899 10000:$0.5039 5000:$0.5249 2500:$0.5409
SI4686DY-T1-E3 DISTI # 75M5494	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 18.2A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	10000:$0.5720 6000:$0.5850 4000:$0.6080 2000:$0.6750 1000:$0.7430 1:$0.7740
SI4686DY-T1-E3 DISTI # 69W7202	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 18.2A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	500:$0.8170 250:$0.8840 100:$0.9500 50:$1.0400 25:$1.1400 10:$1.2300 1:$1.4900
SI4686DY-T1-E3 DISTI # 781-SI4686DY-T1-E3	Vishay Intertechnologies	MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V RoHS: Compliant	4290	1:$1.4800 10:$1.2200 100:$0.9410 500:$0.8090
SI4686DY-T1-E3	VISHAY INTERTECHNOLOGIES		604	281:$0.6198 51:$0.7152 1:$2.3840
SI4686DY-T1-E3 DISTI # 2335317	Vishay Intertechnologies	MOSFET, N CH, 30V, 18.2A, SOIC RoHS: Compliant	307	250:£0.3580 100:£0.3730 25:£0.3870 5:£0.4020
SI4686DY-T1-E3	Vishay Intertechnologies	MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V	Americas -

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI4686DY-T1-E3 OMO.#: OMO-SI4686DY-T1-E3	MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
	Mfr.#: SI4686DY-T1-GE3 OMO.#: OMO-SI4686DY-T1-GE3	MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
	Mfr.#: SI4686DY OMO.#: OMO-SI4686DY-1190	Neu und Original
	Mfr.#: SI4686DY-T1 OMO.#: OMO-SI4686DY-T1-1190	Neu und Original
	Mfr.#: SI4686DY-T1-E3 OMO.#: OMO-SI4686DY-T1-E3-VISHAY	MOSFET N-CH 30V 18.2A 8-SOIC
	Mfr.#: SI4686DY-T1-GE3 OMO.#: OMO-SI4686DY-T1-GE3-VISHAY	MOSFET N-CH 30V 18.2A 8-SOIC
	Mfr.#: SI4686DY-TI-E3 OMO.#: OMO-SI4686DY-TI-E3-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von SI4686DY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,48 $~~; ~~1,48 $~~

10: ~~1,22 $~~; ~~12,20 $~~

100: ~~0,94 $~~; ~~94,10 $~~

500: ~~0,81 $~~; ~~404,50 $~~

Beginnen mit

SI4686DY-T1 3
SI4686DY-T 4
SI4686 5
SI468 35
SI46 145
SI4 2994

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