SI4686DY-T1-GE3

Mfr. #:: SI4686DY-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET N-CH 30V 18.2A 8-SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI4686DY-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SI4686DY-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: VISHAY

Produktkategorie: FETs - Einzeln

Verpackung: Spule

Teil-Aliasnamen: SI4686DY-GE3

Gewichtseinheit: 0.006596 oz

Montageart: SMD/SMT

Paket-Koffer: SOIC-Narrow-8

Technologie: Si

Anzahl der Kanäle: 1 Channel

Aufbau: Single

Transistor-Typ: 1 N-Channel

Pd-Verlustleistung: 3 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 8 ns

Anstiegszeit: 20 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 13.8 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Widerstand: 9.5 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 20 ns

Typische-Einschaltverzögerungszeit: 20 ns

Kanal-Modus: Erweiterung

Tags: SI4686DY-T1, SI4686DY-T, SI4686, SI468, SI46, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4686DY-T1-GE3 Beschreibung

***et Europe: Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R

***ment14 APAC: N CHANNEL MOSFET, 30V, 18.2A, SOIC

***ponent Sense: MOSFET SO8S N 0.0144R 30V 13A~

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:18.2A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes

SI4686DY-T1-GE3 Mehr Informationen

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.6930
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2500In Stock	1000:$0.7648 500:$0.9687 100:$1.2491 10:$1.5810 1:$1.7800
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2500In Stock	1000:$0.7648 500:$0.9687 100:$1.2491 10:$1.5810 1:$1.7800
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.5219 5000:€0.3559 10000:€0.3059 15000:€0.2829 25000:€0.2629
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.6189 5000:$0.6009 10000:$0.5759 15000:$0.5599 25000:$0.5449
SI4686DY-T1-GE3 DISTI # 15R5074	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 18.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0	1:$0.6170 2500:$0.6120 5000:$0.5940 10000:$0.5720
SI4686DY-T1-GE3 DISTI # 26R1888	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 18.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0	1:$1.4900 10:$1.2300 25:$1.1300 50:$1.0400 100:$0.9410 250:$0.8750 500:$0.8090
SI4686DY-T1-GE3 DISTI # 781-SI4686DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V RoHS: Compliant	2486	1:$1.4900 10:$1.2300 100:$0.9410 500:$0.8090 1000:$0.6390 2500:$0.5960 5000:$0.5670 10000:$0.5530

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI4686DY-T1-E3 OMO.#: OMO-SI4686DY-T1-E3	MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
	Mfr.#: SI4686DY-T1-GE3 OMO.#: OMO-SI4686DY-T1-GE3	MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
	Mfr.#: SI4686DY OMO.#: OMO-SI4686DY-1190	Neu und Original
	Mfr.#: SI4686DY-T1 OMO.#: OMO-SI4686DY-T1-1190	Neu und Original
	Mfr.#: SI4686DY-T1-E3 OMO.#: OMO-SI4686DY-T1-E3-VISHAY	MOSFET N-CH 30V 18.2A 8-SOIC
	Mfr.#: SI4686DY-T1-GE3 OMO.#: OMO-SI4686DY-T1-GE3-VISHAY	MOSFET N-CH 30V 18.2A 8-SOIC
	Mfr.#: SI4686DY-TI-E3 OMO.#: OMO-SI4686DY-TI-E3-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von SI4686DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,45 $~~; ~~0,45 $~~

10: ~~0,43 $~~; ~~4,26 $~~

100: ~~0,40 $~~; ~~40,33 $~~

500: ~~0,38 $~~; ~~190,45 $~~

1000: ~~0,36 $~~; ~~358,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI4686DY-T1 3
SI4686DY-T 4
SI4686 5
SI468 35
SI46 145
SI4 2994

SI4686DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes