IPD80R900P7ATMA1

Mfr. #:: IPD80R900P7ATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-CH 800V 6A TO252-3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPD80R900P7ATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: IPD80R, IPD80, IPD8, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD80R900P7ATMA1 Beschreibung

***ure Electronics: Single N-Channel 800 V 900 mOhm 15 nC CoolMOS Power Mosfet - DPAK

***ical: Trans MOSFET N-CH 800V 6A 3-Pin(2+Tab) DPAK T/R

***i-Key: MOSFET N-CH 800V 6A TO252-3

***ronik: N-CH 800V 6A 900mOhm DPAK

***et Europe: LOW POWER_NEW

***ark: Mosfet, N-Ch, 800V, 6A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.77Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 800V, 6A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.77ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 800V, 6A, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.77ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:45W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: 800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPD80R900P7ATMA1 DISTI # V36:1790_18205142	Infineon Technologies AG	IPD80R900P7ATMA1	0	2500:$0.4355
IPD80R900P7ATMA1 DISTI # IPD80R900P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 800V 6A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1413In Stock	1000:$0.6066 500:$0.7683 100:$0.9301 10:$1.1930 1:$1.3300
IPD80R900P7ATMA1 DISTI # IPD80R900P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 6A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1413In Stock	1000:$0.6066 500:$0.7683 100:$0.9301 10:$1.1930 1:$1.3300
IPD80R900P7ATMA1 DISTI # IPD80R900P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 6A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	12500:$0.5025 5000:$0.5222 2500:$0.5496
IPD80R900P7ATMA1 DISTI # IPD80R900P7ATMA1	Infineon Technologies AG	LOW POWER_NEW - Tape and Reel (Alt: IPD80R900P7ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.4749 15000:$0.4829 10000:$0.4999 5000:$0.5189 2500:$0.5379
IPD80R900P7ATMA1 DISTI # 24AC9048	Infineon Technologies AG	LOW POWER_NEW - Product that comes on tape, but is not reeled (Alt: 24AC9048) RoHS: Compliant Min Qty: 5 Container: Ammo Pack	Americas - 0
IPD80R900P7ATMA1 DISTI # SP001633484	Infineon Technologies AG	LOW POWER_NEW (Alt: SP001633484) RoHS: Compliant Min Qty: 2500	Europe - 0	25000:€0.4439 15000:€0.4779 10000:€0.5179 5000:€0.5659 2500:€0.6909
IPD80R900P7ATMA1 DISTI # 24AC9048	Infineon Technologies AG	MOSFET, N-CH, 800V, 6A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.77ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	4707	1:$0.3930 10:$0.3930 25:$0.3930 50:$0.3930 100:$0.3930 250:$0.3930 500:$0.3930 1000:$0.3930
IPD80R900P7ATMA1 DISTI # 726-IPD80R900P7ATMA1	Infineon Technologies AG	MOSFET RoHS: Compliant	2492	1:$1.2200 10:$1.0400 100:$0.8040 500:$0.7110 1000:$0.5610
IPD80R900P7ATMA1	Infineon Technologies AG		2500
IPD80R900P7ATMA1 DISTI # 2771326	Infineon Technologies AG	MOSFET, N-CH, 800V, 6A, TO-252 RoHS: Compliant	3007	1000:$0.9080 500:$1.1500 100:$1.4000 10:$1.7900 1:$1.9900
IPD80R900P7ATMA1 DISTI # 2771326	Infineon Technologies AG	MOSFET, N-CH, 800V, 6A, TO-252	3017	500:£0.5430 250:£0.5780 100:£0.6130 10:£0.8490 1:£1.0700

Verwandte Produkte

Bild

Teil #

Beschreibung

Mfr.#: IPD80R900P7ATMA1-CUT TAPE

OMO.#: OMO-IPD80R900P7ATMA1-CUT-TAPE-1190

Neu und Original

Mfr.#: IPD80R900P7ATMA1

OMO.#: OMO-IPD80R900P7ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 800V 6A TO252-3

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von IPD80R900P7ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,59 $~~; ~~0,59 $~~

10: ~~0,56 $~~; ~~5,60 $~~

100: ~~0,53 $~~; ~~53,06 $~~

500: ~~0,50 $~~; ~~250,55 $~~

1000: ~~0,47 $~~; ~~471,60 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPD80R900P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes