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QPD1009

QPD1009
Mfr. #:
QPD1009
Hersteller:
Qorvo
Beschreibung:
RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
QPD1009 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
QPD1009 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Qorvo
Produktkategorie:
HF-JFET-Transistoren
RoHS:
Y
Transistortyp:
HEMT
Technologie:
GaN SiC
Gewinnen:
24 dB
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
50 V
Vgs - Gate-Source-Durchbruchspannung:
145 V
Id - Kontinuierlicher Drainstrom:
700 mA
Ausgangsleistung:
17 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Pd - Verlustleistung:
17.5 W
Montageart:
SMD/SMT
Paket / Koffer:
QFN-16
Verpackung:
Tablett
Aufbau:
Single
Arbeitsfrequenz:
4 GHz
Betriebstemperaturbereich:
- 40 C to + 85 C
Serie:
QPD
Marke:
Qorvo
Entwicklungs-Kit:
QPD1009-EVB1
Feuchtigkeitsempfindlich:
ja
Produktart:
HF-JFET-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
Transistoren
Vgs th - Gate-Source-Schwellenspannung:
- 2.8 V
Teil # Aliase:
1132865
Tags
QPD100, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 4.0 GHz, 15 W, 50 V, 3 x 3 mm, GaN
QPD1009 & QPD1010 GaN RF Transistors
Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization potentially lowers system cost in terms of fewer amplifier line-ups and lower thermal management costs.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
Teil # Mfg. Beschreibung Aktie Preis
QPD1009
DISTI # 772-QPD1009		QorvoRF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
RoHS: Compliant		171
  • 1:$31.0000
  • 25:$26.8100
  • 100:$23.1900
  • 250:$21.5700
QPD1009-EVB1
DISTI # 772-QPD1009-EVB1		QorvoRF Development Tools DC-4GHz 15W 28-50V Eval Board
RoHS: Compliant		3
  • 1:$875.0000
Bild Teil # Beschreibung
MR4A08BUYS45

Mfr.#: MR4A08BUYS45

OMO.#: OMO-MR4A08BUYS45

 NVRAM 16Mb 3.3V 45ns 2Mx8 Parallel MRAM
FERD20H100SB-TR

Mfr.#: FERD20H100SB-TR

OMO.#: OMO-FERD20H100SB-TR

 Rectifiers RECTIFIER
CGHV40200PP

Mfr.#: CGHV40200PP

OMO.#: OMO-CGHV40200PP

 RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt
LMR23630AFDDAR

Mfr.#: LMR23630AFDDAR

OMO.#: OMO-LMR23630AFDDAR

 Switching Voltage Regulators 36V, 3A, 400kHz Synchronous Regulator
MHQ0402PSA15NHT000

Mfr.#: MHQ0402PSA15NHT000

OMO.#: OMO-MHQ0402PSA15NHT000

 Fixed Inductors 01005, 15nH +-3% S-HQ SMD RF IND
QPD1009-EVB1

Mfr.#: QPD1009-EVB1

OMO.#: OMO-QPD1009-EVB1-1152

 RF Development Tools DC-4GHz 15W 28-50V Eval Board
FERD20H100SB-TR

Mfr.#: FERD20H100SB-TR

OMO.#: OMO-FERD20H100SB-TR-STMICROELECTRONICS

 DIODE RECT 100V 20A DPAK
08055C222K4Z4A

Mfr.#: 08055C222K4Z4A

OMO.#: OMO-08055C222K4Z4A-1190

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 2200pF X7R 0805 10% AEC-Q200 Flexi
CGHV40200PP

Mfr.#: CGHV40200PP

OMO.#: OMO-CGHV40200PP-WOLFSPEED

 RF MOSFET HEMT 440199
MHQ0402PSA15NHT000

Mfr.#: MHQ0402PSA15NHT000

OMO.#: OMO-MHQ0402PSA15NHT000-TDK

 FIXED IND 15NH 120MA 2.1 OHM SMD
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von QPD1009 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
31,00 $
31,00 $
25
26,81 $
670,25 $
100
23,19 $
2 319,00 $
250
21,57 $
5 392,50 $
500
20,06 $
10 030,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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