HGTP15N50E1

HGTP15N50E1
Mfr. #:
HGTP15N50E1
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTP15N50E1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGTP15, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***or
15A, 500V, N-CHANNEL IGBT
Teil # Mfg. Beschreibung Aktie Preis
HGTP15N50E1Harris SemiconductorInsulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-220AB
RoHS: Not Compliant
1985
  • 1000:$1.5100
  • 500:$1.5900
  • 100:$1.6600
  • 25:$1.7300
  • 1:$1.8600
Bild Teil # Beschreibung
HGTP12N60C3D

Mfr.#: HGTP12N60C3D

OMO.#: OMO-HGTP12N60C3D

IGBT Transistors HGTP12N60C3D
HGTP12N60A4

Mfr.#: HGTP12N60A4

OMO.#: OMO-HGTP12N60A4

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTP10N120BN

Mfr.#: HGTP10N120BN

OMO.#: OMO-HGTP10N120BN-ON-SEMICONDUCTOR

IGBT 1200V 35A 298W TO220AB
HGTP10N120BN G10N120BN

Mfr.#: HGTP10N120BN G10N120BN

OMO.#: OMO-HGTP10N120BN-G10N120BN-1190

Neu und Original
HGTP10N120BN,10N120BN,

Mfr.#: HGTP10N120BN,10N120BN,

OMO.#: OMO-HGTP10N120BN-10N120BN--1190

Neu und Original
HGTP10N50E1

Mfr.#: HGTP10N50E1

OMO.#: OMO-HGTP10N50E1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB
HGTP12N60B3D

Mfr.#: HGTP12N60B3D

OMO.#: OMO-HGTP12N60B3D-1190

Neu und Original
HGTP14N44G3VL

Mfr.#: HGTP14N44G3VL

OMO.#: OMO-HGTP14N44G3VL-1190

300mJ, 440V, N-Channel Ignition IGBT - Bulk (Alt: HGTP14N44G3VL)
HGTP15N50E1

Mfr.#: HGTP15N50E1

OMO.#: OMO-HGTP15N50E1-1190

Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-220AB
HGTP12N60A4D 12N60A4D

Mfr.#: HGTP12N60A4D 12N60A4D

OMO.#: OMO-HGTP12N60A4D-12N60A4D-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von HGTP15N50E1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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Stückpreis
ext. Preis
1
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10
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100
0,00 $
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500
0,00 $
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1000
0,00 $
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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