SIHG22N50D-GE3

SIHG22N50D-GE3
Mfr. #:
SIHG22N50D-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 500V Vds 30V Vgs TO-247AC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHG22N50D-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG22N50D-GE3 DatasheetSIHG22N50D-GE3 Datasheet (P4-P6)SIHG22N50D-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIHG22N50D-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247AC-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
22 A
Rds On - Drain-Source-Widerstand:
230 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
49 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
312 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
20.82 mm
Länge:
15.87 mm
Serie:
D
Breite:
5.31 mm
Marke:
Vishay / Siliconix
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
42 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
47 ns
Typische Einschaltverzögerungszeit:
21 ns
Gewichtseinheit:
1.340411 oz
Tags
SIHG22N5, SIHG22, SIHG2, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
N-Channel MOSFET, 22 A, 500 V, 3-Pin TO-247AC Vishay SiHG22N50D-GE3
***ure Electronics
Single N-Channel 500 V 0.23 Ohm 98 nC 312 W Silicon Flange Mount Mosfet TO-247AC
***et Europe
Trans MOSFET N-CH 500V 22A 3-Pin TO-247AC
***ical
Trans MOSFET N-CH 500V 22A
***i-Key
MOSFET N-CH 500V 22A TO-247AC
***ark
MOSFET, N-CH, 500V, 22A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 500V, 22A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Teil # Mfg. Beschreibung Aktie Preis
SIHG22N50D-GE3
DISTI # V99:2348_09219131
Vishay IntertechnologiesN-CHANNEL 500V
RoHS: Compliant
500
  • 1000:$2.3720
  • 500:$2.7350
  • 100:$3.0780
  • 10:$3.5890
  • 1:$4.1650
SIHG22N50D-GE3
DISTI # SIHG22N50D-GE3-ND
Vishay SiliconixMOSFET N-CH 500V 22A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube
18In Stock
  • 1000:$2.6861
  • 500:$3.1849
  • 100:$3.9332
  • 10:$4.7970
  • 1:$5.3700
SIHG22N50D-GE3
DISTI # 25872833
Vishay IntertechnologiesN-CHANNEL 500V
RoHS: Compliant
500
  • 500:$2.7350
  • 100:$3.0780
  • 10:$3.5890
  • 3:$4.1650
SIHG22N50D-GE3
DISTI # 27549453
Vishay IntertechnologiesN-CHANNEL 500V
RoHS: Compliant
75
  • 29:$2.2125
SIHG22N50D-GE3
DISTI # SIHG22N50D-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 22A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG22N50D-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$2.4900
  • 1000:$2.3900
  • 2000:$2.2900
  • 3000:$2.1900
  • 5000:$2.1900
SIHG22N50D-GE3
DISTI # 62W0515
Vishay IntertechnologiesMOSFET Transistor, N Channel, 22 A, 500 V, 0.185 ohm, 10 V, 3 V RoHS Compliant: Yes75
  • 1:$1.7700
  • 10:$1.7700
  • 25:$1.7700
  • 50:$1.7700
  • 100:$1.7700
  • 500:$1.7700
  • 1000:$1.7700
  • 2500:$1.7700
SIHG22N50D-GE3
DISTI # 78-SIHG22N50D-GE3
Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-247AC
RoHS: Compliant
500
  • 1:$4.8900
  • 10:$4.0500
  • 100:$3.3400
  • 250:$3.2300
  • 500:$2.9000
  • 1000:$2.4500
  • 2500:$2.3200
SIHG22N50D-GE3
DISTI # 7879197P
Vishay IntertechnologiesMOSFET N-CH 500V 22A LOW CAP. TO247AC, RL42
  • 10:£2.5300
  • 20:£2.5200
  • 50:£2.5100
  • 250:£2.3400
SIHG22N50DGE3Vishay IntertechnologiesPower Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant
Europe - 375
    SIHG22N50DGE3Vishay Siliconix 
    RoHS: Compliant
    Europe - 125
      SIHG22N50D-GE3
      DISTI # 2283626
      Vishay IntertechnologiesMOSFET, N-CH, 500V, 22A, TO-247AC
      RoHS: Compliant
      0
      • 1:$7.7400
      • 10:$6.4100
      • 100:$5.2900
      • 250:$5.1200
      • 500:$4.5900
      • 1000:$3.8800
      • 2500:$3.6800
      • 5000:$3.5500
      SIHG22N50D-GE3
      DISTI # C1S803601945738
      Vishay IntertechnologiesTrans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC
      RoHS: Compliant
      500
      • 500:$2.7350
      • 100:$3.0780
      • 10:$3.5890
      • 1:$4.1650
      SIHG22N50D-GE3
      DISTI # 2283626
      Vishay IntertechnologiesMOSFET, N-CH, 500V, 22A, TO-247AC
      RoHS: Compliant
      0
      • 1:£3.7000
      • 10:£2.5400
      • 100:£2.4500
      • 250:£2.3600
      • 500:£2.2200
      Bild Teil # Beschreibung
      SIHG22N50D-E3

      Mfr.#: SIHG22N50D-E3

      OMO.#: OMO-SIHG22N50D-E3

      MOSFET 500V Vds 30V Vgs TO-247AC
      SIHG22N60E-GE3

      Mfr.#: SIHG22N60E-GE3

      OMO.#: OMO-SIHG22N60E-GE3

      MOSFET 600V Vds 30V Vgs TO-247AC
      SIHG22N60EF-GE3

      Mfr.#: SIHG22N60EF-GE3

      OMO.#: OMO-SIHG22N60EF-GE3

      MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode
      SIHG22N60EL-GE3

      Mfr.#: SIHG22N60EL-GE3

      OMO.#: OMO-SIHG22N60EL-GE3

      MOSFET 600V Vds 30V Vgs TO-247AC
      SIHG22N60AEL-GE3

      Mfr.#: SIHG22N60AEL-GE3

      OMO.#: OMO-SIHG22N60AEL-GE3-VISHAY

      MOSFET N-CHAN 600V
      SIHG22N50D-E3

      Mfr.#: SIHG22N50D-E3

      OMO.#: OMO-SIHG22N50D-E3-VISHAY

      MOSFET N-CH 500V 22A TO-247AC
      SIHG22N50DGE3

      Mfr.#: SIHG22N50DGE3

      OMO.#: OMO-SIHG22N50DGE3-1190

      Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC
      SIHG22N60E-GE3

      Mfr.#: SIHG22N60E-GE3

      OMO.#: OMO-SIHG22N60E-GE3-VISHAY

      MOSFET N-CH 600V 21A TO247AC
      SIHG22N60S-E3,22N60

      Mfr.#: SIHG22N60S-E3,22N60

      OMO.#: OMO-SIHG22N60S-E3-22N60-1190

      Neu und Original
      SIHG22N60AE-GE3

      Mfr.#: SIHG22N60AE-GE3

      OMO.#: OMO-SIHG22N60AE-GE3-VISHAY

      MOSFET N-CH 600V 20A TO247AC
      Verfügbarkeit
      Aktie:
      370
      Auf Bestellung:
      2353
      Menge eingeben:
      Der aktuelle Preis von SIHG22N50D-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      4,88 $
      4,88 $
      10
      4,04 $
      40,40 $
      100
      3,33 $
      333,00 $
      250
      3,22 $
      805,00 $
      500
      2,89 $
      1 445,00 $
      1000
      2,44 $
      2 440,00 $
      2500
      2,31 $
      5 775,00 $
      5000
      2,23 $
      11 150,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Neueste Produkte
      • -12 V and -20 V P-Channel Gen III MOSFETs
        Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
      • DG2788A Dual DPDT / Quad SPDT Analog Switch
        Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
      • Smart Load Switches
        Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
      • Compare SIHG22N50D-GE3
        SIHG22N50D vs SIHG22N50DE3 vs SIHG22N50DGE3
      • SUM70101EL 100 V P-Channel MOSFET
        Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
      • DGQ2788A AEC-Q100 Qualified Analog Switch
        The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
      Top