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ZXMHC10A07T8TA

ZXMHC10A07T8TA
Mfr. #:
ZXMHC10A07T8TA
Hersteller:
Diodes Incorporated
Beschreibung:
Darlington Transistors MOSFET 100V 1.4A N-Channel MOSFET H-Bridge
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
ZXMHC10A07T8TA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
ZXMHC10A07T8TA Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Eingebaute Dioden
Produktkategorie
FETs - Arrays
Serie
ZXMHC10
Verpackung
Digi-ReelR Alternative Verpackung
Montageart
SMD/SMT
Paket-Koffer
SOT-223-8
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
4 Channel
Lieferanten-Geräte-Paket
SM8
Aufbau
Halbbrücke
FET-Typ
2 N and 2 P-Channel (H-Bridge)
Leistung max
1.3W
Transistor-Typ
2 N-Channel 2 P-Channel
Drain-zu-Source-Spannung-Vdss
100V
Eingangskapazität-Ciss-Vds
138pF @ 60V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
1A, 800mA
Rds-On-Max-Id-Vgs
700 mOhm @ 1.5A, 10V
Vgs-th-Max-Id
4V @ 250μA
Gate-Lade-Qg-Vgs
2.9nC @ 10V
Pd-Verlustleistung
1.3 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
2.1 ns 3.3 ns
Anstiegszeit
1.5 ns 2.1 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
1.1 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2 V
Rds-On-Drain-Source-Widerstand
700 mOhms 1 Ohms
Transistor-Polarität
N-Kanal P-Kanal
Typische-Ausschaltverzögerungszeit
4.1 ns 5.9 ns
Typische-Einschaltverzögerungszeit
1.8 ns 1.6 ns
Qg-Gate-Ladung
2.9 nC 3.5 nC
Vorwärts-Transkonduktanz-Min
1.6 S 1.2 S
Kanal-Modus
Erweiterung
Tags
ZXMHC1, ZXMHC, ZXMH, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, ZXMHC10A07T8TA Quad N/P-Channel MOSFET, 1.1 A, 800 mA, 100 V, 8-Pin SM Diodes Inc
***C
Trans MOSFET N/P-CH 100V 1.1A/0.9A 8-Pin SM8 T/R Trans MOSFET N/P-CH 100V 1.1A/0.9A 8-Pin SM8 T/R
***et Europe
Trans MOSFET N/P-CH 100V 1.1A/0.9A 8-Pin SM8 T/R
***ical
Trans MOSFET N/P-CH 100V 1A/0.8A 8-Pin SM8 T/R
***ied Electronics & Automation
100V Enhancement MOSFET H-Bridge SM8
***ure Electronics
MOSFET BVDSS: 61V~100V SM-8 T&R 1K
***i-Key
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
***ronik
H-Br 100V 1A 1700mOhm SM-8
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Teil # Mfg. Beschreibung Aktie Preis
ZXMHC10A07T8TA
DISTI # ZXMHC10A07T8CT-ND		Diodes IncorporatedMOSFET 2N/2P-CH 100V 1A/0.8A SM8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10735In Stock
  • 500:$1.0905
  • 100:$1.4021
  • 10:$1.7450
  • 1:$1.9300
ZXMHC10A07T8TA
DISTI # ZXMHC10A07T8DKR-ND		Diodes IncorporatedMOSFET 2N/2P-CH 100V 1A/0.8A SM8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10735In Stock
  • 500:$1.0905
  • 100:$1.4021
  • 10:$1.7450
  • 1:$1.9300
ZXMHC10A07T8TA
DISTI # ZXMHC10A07T8TR-ND		Diodes IncorporatedMOSFET 2N/2P-CH 100V 1A/0.8A SM8
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		9000In Stock
  • 1000:$0.8772
ZXMHC10A07T8TA
DISTI # ZXMHC10A07T8TA		Diodes IncorporatedTrans MOSFET N/P-CH 100V 1.1A/0.9A 8-Pin SM8 T/R - Tape and Reel (Alt: ZXMHC10A07T8TA)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.8289
  • 2000:$0.7889
  • 4000:$0.7519
  • 6000:$0.7179
  • 10000:$0.7019
ZXMHC10A07T8TA
DISTI # 70550623		Diodes Incorporated100V Enhancement MOSFET H-Bridge SM8
RoHS: Compliant		0
  • 25:$1.3700
  • 50:$1.3430
  • 125:$1.3020
  • 250:$1.2470
  • 625:$1.1650
ZXMHC10A07T8TA
DISTI # 522-ZXMHC10A07T8TA		Diodes IncorporatedMOSFET 100V 1.4A N-Channel MOSFET H-Bridge
RoHS: Compliant		1535
  • 1:$1.6200
  • 10:$1.3800
  • 100:$1.1000
  • 500:$0.9630
  • 1000:$0.7980
ZXMHC10A07T8TA
DISTI # 8231873P		Zetex / Diodes Inc100V ENHANCEMENT MOSFET H-BRIDGE SM8, RL660
  • 25:£0.5000
ZXMHC10A07T8TADiodes Incorporated 
RoHS: Compliant		Europe - 405
    ZXMHC10A07T8TAZetex / Diodes Inc 1666
      Bild Teil # Beschreibung
      ZXMHC10A07N8TC

      Mfr.#: ZXMHC10A07N8TC

      OMO.#: OMO-ZXMHC10A07N8TC

      		 MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9
      ZXMHC10A07T8TA

      Mfr.#: ZXMHC10A07T8TA

      OMO.#: OMO-ZXMHC10A07T8TA

      		 MOSFET 100V 1.4A N-Channel MOSFET H-Bridge
      ZXMHC10A07N8TC

      Mfr.#: ZXMHC10A07N8TC

      OMO.#: OMO-ZXMHC10A07N8TC-DIODES

      		 Trans MOSFET N/P-CH 100V 1A/0.85A Automotive 8-Pin SO T/R
      ZXMHC10A07T8TC

      Mfr.#: ZXMHC10A07T8TC

      OMO.#: OMO-ZXMHC10A07T8TC-1190

      		 Neu und Original
      ZXMHC10A07T8TA

      Mfr.#: ZXMHC10A07T8TA

      OMO.#: OMO-ZXMHC10A07T8TA-DIODES

      		 Darlington Transistors MOSFET 100V 1.4A N-Channel MOSFET H-Bridge
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von ZXMHC10A07T8TA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,05 $
      1,05 $
      10
      1,00 $
      10,00 $
      100
      0,95 $
      94,76 $
      500
      0,89 $
      447,45 $
      1000
      0,84 $
      842,30 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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