STGFW80V60F

STGFW80V60F
Mfr. #:
STGFW80V60F
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors PTD HIGH VOLTAGE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGFW80V60F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGFW80V60F Mehr Informationen STGFW80V60F Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3PF
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.85 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
120 A
Pd - Verlustleistung:
79 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGFW80V60F
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
300
Unterkategorie:
IGBTs
Gewichtseinheit:
0.245577 oz
Tags
STGFW, STGF, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
***et
Trans IGBT Chip N-CH 600V 120A 3-Pin TO-3PF Tube
***i-Key
IGBT 600V 120A 79W TO-3PF
***ark
Conditioning & Interfaces
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
Teil # Mfg. Beschreibung Aktie Preis
STGFW80V60F
DISTI # 497-15008-5-ND
STMicroelectronicsIGBT 600V 120A 79W TO-3PF
RoHS: Compliant
Min Qty: 1
Container: Tube
203In Stock
  • 2520:$3.9270
  • 510:$4.5651
  • 120:$5.2426
  • 30:$6.0377
  • 10:$6.3320
  • 1:$7.0100
STGFW80V60F
DISTI # STGFW80V60F
STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin TO-3PF Tube - Rail/Tube (Alt: STGFW80V60F)
RoHS: Compliant
Min Qty: 300
Container: Tube
Americas - 0
  • 3000:$3.7900
  • 1800:$3.8900
  • 1200:$3.9900
  • 600:$4.1900
  • 300:$4.3900
STGFW80V60F
DISTI # 26Y5779
STMicroelectronicsPTD HIGH VOLTAGE0
  • 500:$3.9000
  • 250:$4.0200
  • 100:$4.8000
  • 50:$5.1600
  • 25:$5.5200
  • 10:$6.0600
  • 1:$6.7500
STGFW80V60F
DISTI # 511-STGFW80V60F
STMicroelectronicsIGBT Transistors PTD HIGH VOLTAGE
RoHS: Compliant
50
  • 1:$6.6700
  • 10:$6.0300
  • 25:$5.7500
  • 100:$4.9900
  • 250:$4.7600
  • 500:$4.3400
  • 1000:$3.7800
Bild Teil # Beschreibung
STGFW20V60F

Mfr.#: STGFW20V60F

OMO.#: OMO-STGFW20V60F

IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
STGFW30V60F

Mfr.#: STGFW30V60F

OMO.#: OMO-STGFW30V60F

IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
STGFW40V60DF

Mfr.#: STGFW40V60DF

OMO.#: OMO-STGFW40V60DF

IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
STGFW20H65FB

Mfr.#: STGFW20H65FB

OMO.#: OMO-STGFW20H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
STGFW30H65FB

Mfr.#: STGFW30H65FB

OMO.#: OMO-STGFW30H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
STGFW30NC60V

Mfr.#: STGFW30NC60V

OMO.#: OMO-STGFW30NC60V-STMICROELECTRONICS

IGBT Transistors 40 A 600V Very Fast High Freq 50KHz IGBT
STGFW30H65FB

Mfr.#: STGFW30H65FB

OMO.#: OMO-STGFW30H65FB-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGFW40V60F

Mfr.#: STGFW40V60F

OMO.#: OMO-STGFW40V60F-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGFW20V60DF

Mfr.#: STGFW20V60DF

OMO.#: OMO-STGFW20V60DF-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGFW40H65FB

Mfr.#: STGFW40H65FB

OMO.#: OMO-STGFW40H65FB-STMICROELECTRONICS

IGBT HB 650V 40A ISOWATT218
Verfügbarkeit
Aktie:
50
Auf Bestellung:
2033
Menge eingeben:
Der aktuelle Preis von STGFW80V60F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,67 $
6,67 $
10
6,03 $
60,30 $
25
5,75 $
143,75 $
100
4,99 $
499,00 $
250
4,76 $
1 190,00 $
500
4,34 $
2 170,00 $
1000
3,78 $
3 780,00 $
2500
3,64 $
9 100,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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