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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SIHD3N50D-GE3 DISTI # V36:1790_09218407 | Vishay Intertechnologies | Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK RoHS: Compliant | 0 |
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| SIHD3N50D-GE3 DISTI # SIHD3N50D-GE3-ND | Vishay Siliconix | MOSFET N-CH 500V 3A TO252 DPAK RoHS: Compliant Min Qty: 1 Container: Tube | 1520In Stock |
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| SIHD3N50D-GE3 DISTI # SIHD3N50D-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 500V 3A 3-Pin DPAK - Tape and Reel (Alt: SIHD3N50D-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
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| SIHD3N50D-GE3 DISTI # SIHD3N50D-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 500V 3A 3-Pin DPAK (Alt: SIHD3N50D-GE3) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| SIHD3N50D-GE3 DISTI # 99W9455 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 3A, TO-252AA-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:500V,On Resistance Rds(on):2.6ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 |
|
| SIHD3N50D-GE3 DISTI # 08X3789 | Vishay Intertechnologies | MOSFET, N CHANNEL, 500V, 3A, TO-252AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:500V,On Resistance Rds(on):2.6ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 |
|
| SIHD3N50D-GE3 DISTI # 78-SIHD3N50D-GE3 | Vishay Intertechnologies | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 79 |
|
| SIHD3N50D-GE3 DISTI # 7879143 | Vishay Intertechnologies | MOSFET N-CH 500V 3A LOW CAP. TO252AA, PK | 1850 |
|
| SIHD3N50D-GE3 DISTI # 2283607 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 3A, DPAK RoHS: Compliant | 2775 |
|
| SIHD3N50D-GE3 DISTI # 2283607 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 3A, DPAK | 8739 |
|
| SIHD3N50DGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 3000 | |
| SIHD3N50D-GE3 | Vishay Intertechnologies | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | Americas - |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SIHD3N50DT4-GE3 OMO.#: OMO-SIHD3N50DT4-GE3 |
MOSFET 500V Vds 30V Vgs DPAK (TO-252) |
|
Mfr.#: SIHD3N50D-E3 OMO.#: OMO-SIHD3N50D-E3 |
MOSFET 500V Vds 30V Vgs DPAK (TO-252) |
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Mfr.#: SIHD3N50DT1-GE3 OMO.#: OMO-SIHD3N50DT1-GE3 |
MOSFET 500V Vds 30V Vgs DPAK (TO-252) |
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Mfr.#: SIHD3N50DT5-GE3 OMO.#: OMO-SIHD3N50DT5-GE3 |
MOSFET 500V Vds 30V Vgs DPAK (TO-252) |
|
Mfr.#: SIHD3N50D OMO.#: OMO-SIHD3N50D-1190 |
Neu und Original |
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Mfr.#: SIHD3N50D FQD3N59C OMO.#: OMO-SIHD3N50D-FQD3N59C-1190 |
Neu und Original |
|
Mfr.#: SIHD3N50D-E3 OMO.#: OMO-SIHD3N50D-E3-VISHAY |
MOSFET N-CH 500V 3A TO252 DPAK |
|
Mfr.#: SIHD3N50D-GE3 OMO.#: OMO-SIHD3N50D-GE3-VISHAY |
MOSFET N-CH 500V 3A TO252 DPAK |
|
|
Mfr.#: SIHD3N50DGE3 OMO.#: OMO-SIHD3N50DGE3-1190 |
Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
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Mfr.#: SIHD3N50DT1-GE3 OMO.#: OMO-SIHD3N50DT1-GE3-1190 |
Neu und Original |