IRF7807APBF

IRF7807APBF
Mfr. #:
IRF7807APBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 30V 1 N-CH HEXFET 25mOhms 12nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7807APBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7807APBF DatasheetIRF7807APBF Datasheet (P4-P6)IRF7807APBF Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
6.6 A
Rds On - Drain-Source-Widerstand:
25 mOhms
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
12 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Typ:
HEXFET-Chipsatz für DC-DC-Wandler
Breite:
3.9 mm
Marke:
Infineon / IR
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
17 ns
Werkspackungsmenge:
95
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
25 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
SP001566402
Gewichtseinheit:
0.019048 oz
Tags
IRF7807A, IRF7807, IRF780, IRF78, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRF7807APBF N-channel MOSFET Transistor, 8.3 A, 30 V, 8-Pin SOIC
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC
***Components
MOSFET N-Channel 30V 8.3A SOIC8
***th Star Micro
MOSFET N-CH 30V 8.3A 8-SOIC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.3A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***eco
30V 8.300A SO-8 <AZ
***nell
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:8.3A; Resistance, Rds On:0.025ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:66A; External Length / Height:1.75mm; No. of Pins:8; Power Dissipation:2.5W; Power, Pd:2.5W; Row Pitch:6.3mm; SMD Marking:F7807A; Voltage, Vds Max:30V; Width, External:4.05mm
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.3A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:66A; Row Pitch:6.3mm; SMD Marking:F7807A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
Teil # Mfg. Beschreibung Aktie Preis
IRF7807APBF
DISTI # IRF7807APBF-ND
Infineon Technologies AGMOSFET N-CH 30V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube
Limited Supply - Call
    IRF7807APBF
    DISTI # IRF7807APBF
    Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC - Rail/Tube (Alt: IRF7807APBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube
    Americas - 37
      IRF7807APBF
      DISTI # 70018269
      Infineon Technologies AGIRF7807APBF N-channel MOSFET Transistor,8.3 A,30 V,8-Pin SOIC
      RoHS: Compliant
      0
      • 3800:$1.3100
      • 7600:$1.2840
      • 19000:$1.2450
      • 38000:$1.1920
      • 95000:$1.1140
      IRF7807APBF
      DISTI # 942-IRF7807APBF
      Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 25mOhms 12nC
      RoHS: Compliant
      0
        IRF7807APBF
        DISTI # 9102930
        Infineon Technologies AGMOSFET, N, SO-8
        RoHS: Compliant
        0
        • 1:$1.6100
        • 10:$1.3200
        • 100:$1.0700
        • 500:$0.9570
        • 1000:$0.8490
        • 2500:$0.7890
        • 10000:$0.7620
        • 25000:$0.7140
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        IGBT Transistors MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 9.5nC
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1500
        Menge eingeben:
        Der aktuelle Preis von IRF7807APBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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