IXFT30N50Q3

IXFT30N50Q3
Mfr. #:
IXFT30N50Q3
Hersteller:
Littelfuse
Beschreibung:
Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFT30N50Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IXFT30N50Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXFT30N50
Verpackung
Rohr
Gewichtseinheit
0.229281 oz
Montageart
SMD/SMT
Handelsname
HyperFET
Paket-Koffer
TO-268-2
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
690 W
Anstiegszeit
250 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
30 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Rds-On-Drain-Source-Widerstand
200 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
62 nC
Tags
IXFT30N5, IXFT30, IXFT3, IXFT, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFT30N50Q3
DISTI # IXFT30N50Q3-ND
IXYS CorporationMOSFET N-CH 500V 30A TO-268
RoHS: Compliant
Min Qty: 1
Container: Tube
35In Stock
  • 510:$7.9623
  • 120:$9.5034
  • 30:$10.5310
  • 1:$12.8400
IXFT30N50Q3
DISTI # 747-IXFT30N50Q3
IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A
RoHS: Compliant
175
  • 1:$13.4100
  • 10:$12.0800
  • 25:$10.0500
  • 50:$9.3300
  • 100:$9.1200
  • 250:$8.3300
  • 500:$7.6000
  • 1000:$7.2500
IXFT30N50Q3
DISTI # 8011465P
IXYS CorporationMOSFET N-CH 500V 30A Q3 HIPERFET TO268, TU36
  • 5:£4.1400
Bild Teil # Beschreibung
IXFT32N100XHV

Mfr.#: IXFT32N100XHV

OMO.#: OMO-IXFT32N100XHV

MOSFET 1000V 32A TO-268HV Power MOSFET
IXFT36N50P

Mfr.#: IXFT36N50P

OMO.#: OMO-IXFT36N50P

MOSFET 500V 36A
IXFT30N50Q3

Mfr.#: IXFT30N50Q3

OMO.#: OMO-IXFT30N50Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A
IXFT36N60P

Mfr.#: IXFT36N60P

OMO.#: OMO-IXFT36N60P

MOSFET 600V 36A
IXFT30N40Q

Mfr.#: IXFT30N40Q

OMO.#: OMO-IXFT30N40Q

MOSFET 30 Amps 400V 0.16 Rds
IXFT320N10T2

Mfr.#: IXFT320N10T2

OMO.#: OMO-IXFT320N10T2-IXYS-CORPORATION

Darlington Transistors MOSFET Trench T2 HiperFET Power MOSFET
IXFT30N50Q3

Mfr.#: IXFT30N50Q3

OMO.#: OMO-IXFT30N50Q3-IXYS-CORPORATION

Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A
IXFT30N40Q

Mfr.#: IXFT30N40Q

OMO.#: OMO-IXFT30N40Q-128

MOSFET 30 Amps 400V 0.16 Rds
IXFT30N50Q

Mfr.#: IXFT30N50Q

OMO.#: OMO-IXFT30N50Q-IXYS-CORPORATION

MOSFET 30 Amps 500V 0.16 Rds
IXFT36N60P

Mfr.#: IXFT36N60P

OMO.#: OMO-IXFT36N60P-IXYS-CORPORATION

IGBT Transistors MOSFET 600V 36A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von IXFT30N50Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
10,86 $
10,86 $
10
10,31 $
103,15 $
100
9,77 $
977,20 $
500
9,23 $
4 614,55 $
1000
8,69 $
8 686,20 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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