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PGA26E07BA

PGA26E07BA
Mfr. #:
PGA26E07BA
Hersteller:
Panasonic
Beschreibung:
MOSFET MOSFET 600VDC 70mohm X-GaN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PGA26E07BA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
PGA26E07BA Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Panasonic
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
GaN
Montageart:
SMD/SMT
Paket / Koffer:
DFN-8
Anzahl der Kanäle:
1 Channel
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
26 A
Rds On - Drain-Source-Widerstand:
70 mOhms
Qg - Gate-Ladung:
5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
96 W
Aufbau:
Single
Handelsname:
X-GaN
Verpackung:
Spule
Serie:
PGA26E07BA
Marke:
Panasonic
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Werkspackungsmenge:
200
Unterkategorie:
MOSFETs
Teil # Aliase:
PGA26E07BA2
Tags
PGA26E0, PGA26, PGA2, PGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
*** International
PANASONIC/ New
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
Teil # Mfg. Beschreibung Aktie Preis
PGA26E07BA
DISTI # 667-PGA26E07BA		Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 70mohm X-GaN
RoHS: Compliant		29
  • 1:$35.4300
  • 10:$33.4600
  • 25:$31.4900
PGA26E07BA-SWEVB008
DISTI # 667-PGA26E07BASWEV8		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 70mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant		15
  • 1:$400.0000
PGA26E07BA-SWEVB006
DISTI # 667-PGA26E07BASWEVB6		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 70mOhm X-GaN Chopper EVB
RoHS: Compliant		2
  • 1:$375.0000
PGA26E07BA-DB001
DISTI # 667-PGA26E07BADAB001		Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 70mohm X-GaN
RoHS: Compliant		0
  • 1:$55.0000
Bild Teil # Beschreibung
UCC27511ADBVR

Mfr.#: UCC27511ADBVR

OMO.#: OMO-UCC27511ADBVR

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GS-065-008-1-L

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GS66506T-E01-MR

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GS66508T-E02-MR

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LMG3410R070RWHT

Mfr.#: LMG3410R070RWHT

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 PWR MGMT MOSFET/PWR DRIVER
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR-1190

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GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR-1190

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UCC27511ADBVR

Mfr.#: UCC27511ADBVR

OMO.#: OMO-UCC27511ADBVR-TEXAS-INSTRUMENTS

 SINGLE DRIVER
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von PGA26E07BA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
35,43 $
35,43 $
10
33,46 $
334,60 $
25
31,49 $
787,25 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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