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GS66506T-E01-MR

GS66506T-E01-MR
Mfr. #:
GS66506T-E01-MR
Hersteller:
GaN Systems
Beschreibung:
MOSFET 650V 22A E-Mode GaN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GS66506T-E01-MR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GS66506T-E01-MR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
GaN-Systeme
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
GaN
Montageart:
SMD/SMT
Paket / Koffer:
GaNPX-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
22.5 A
Rds On - Drain-Source-Widerstand:
67 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.3 V
Vgs - Gate-Source-Spannung:
7 V
Qg - Gate-Ladung:
4.4 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
0.54 mm
Länge:
5.5 mm
Produkt:
MOSFET
Serie:
GS6650x
Transistortyp:
1 N-Channel
Breite:
4.5 mm
Marke:
GaN-Systeme
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Werkspackungsmenge:
250
Unterkategorie:
MOSFETs
Teil # Aliase:
GS66506T-E01-MR
Tags
GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Teil # Mfg. Beschreibung Aktie Preis
GS66506T-E01-MR
DISTI # 499-GS66506T-E01-MR		GaN SystemsMOSFET 650V 22A E-Mode GaN
RoHS: Compliant		0
  • 1:$17.1700
  • 10:$13.8500
  • 25:$13.2000
  • 250:$12.2700
GS66506T-E01-MR
DISTI # GS66506T-E01-MR		GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant		0
  • 250:$11.7800
Bild Teil # Beschreibung
GS-065-008-1-L

Mfr.#: GS-065-008-1-L

OMO.#: OMO-GS-065-008-1-L

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OMO.#: OMO-GS61004B-E01-MR

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GS61008P-E05-MR

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GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

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Verfügbarkeit
Aktie:
655
Auf Bestellung:
2638
Menge eingeben:
Der aktuelle Preis von GS66506T-E01-MR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
17,17 $
17,17 $
10
13,85 $
138,50 $
25
13,20 $
330,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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