CSD85301Q2T

CSD85301Q2T
Mfr. #:
CSD85301Q2T
Beschreibung:
IGBT Transistors MOSFET Dual N-Channel NexFET Pwr MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD85301Q2T Datenblatt
Die Zustellung:
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Mehr Informationen:
CSD85301Q2T Mehr Informationen CSD85301Q2T Product Details
Produkteigenschaft
Attributwert
Hersteller
Texas Instruments
Produktkategorie
FETs - Arrays
Serie
NexFET
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.000342 oz
Montageart
SMD/SMT
Handelsname
NexFET
Paket-Koffer
6-WDFN Exposed Pad
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
6-WSON (2x2)
Aufbau
Dual
FET-Typ
2 N-Channel (Dual)
Leistung max
2.3W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
469pF @ 10V
FET-Funktion
Logic Level Gate, 5V Drive
Strom-Dauer-Drain-Id-25°C
5A
Rds-On-Max-Id-Vgs
27 mOhm @ 5A, 4.5V
Vgs-th-Max-Id
1.2V @ 250μA
Gate-Lade-Qg-Vgs
5.4nC @ 4.5V
Pd-Verlustleistung
2.3 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
15 ns
Anstiegszeit
26 ns
Vgs-Gate-Source-Spannung
10 V
ID-Dauer-Drain-Strom
5 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Vgs-th-Gate-Source-Threshold-Voltage
600 mV
Rds-On-Drain-Source-Widerstand
99 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
14 ns
Typische-Einschaltverzögerungszeit
6 ns
Qg-Gate-Ladung
5.4 nC
Tags
CSD8530, CSD85, CSD8, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
20V, N ch NexFET MOSFET™, dual SON2x2, 27mOhm 6-WSON -55 to 150
***et
Trans MOSFET N-CH 20V 5A 6-Pin WSON T/R
***ical
Power MOSFET 6-Pin WSON EP T/R
***ark
Mosfet, Dual N-Ch, 20V, 5A, Wson-6; Transistor Polarity:dual N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv; Power Rohs Compliant: Yes
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Teil # Beschreibung Aktie Preis
CSD85301Q2T
DISTI # 296-38668-1-ND
MOSFET 2N-CH 20V 5A 6WSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3385In Stock
  • 100:$0.4450
  • 10:$0.5770
  • 1:$0.6600
CSD85301Q2T
DISTI # 296-38668-6-ND
MOSFET 2N-CH 20V 5A 6WSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3385In Stock
  • 100:$0.4450
  • 10:$0.5770
  • 1:$0.6600
CSD85301Q2T
DISTI # 296-38668-2-ND
MOSFET 2N-CH 20V 5A 6WSON
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
3250In Stock
  • 1250:$0.2560
  • 750:$0.2800
  • 500:$0.3200
  • 250:$0.3760
CSD85301Q2T
DISTI # CSD85301Q2T
Trans MOSFET N-CH 20V 5A 6-Pin WSON T/R - Tape and Reel (Alt: CSD85301Q2T)
RoHS: Compliant
Min Qty: 1750
Container: Reel
Americas - 0
  • 1750:$0.2319
  • 2250:$0.2199
  • 4000:$0.2129
  • 8750:$0.2059
  • 17500:$0.1999
CSD85301Q2T
DISTI # 45Y4802
Dual MOSFET, Dual N Channel, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV RoHS Compliant: Yes0
  • 10:$0.3200
  • 5:$0.4100
  • 1:$0.5000
CSD85301Q2TCSD85301Q2 Dual N-Channel NexFET&#153,Power MOSFET3750
  • 1000:$0.1800
  • 750:$0.2000
  • 500:$0.2500
  • 250:$0.3100
  • 100:$0.3400
  • 25:$0.4000
  • 10:$0.4300
  • 1:$0.4800
CSD85301Q2
DISTI # 595-CSD85301Q2
MOSFET CSD85301Q2 Dual N- Channel Power MOSFET
RoHS: Compliant
1984
  • 1:$0.6100
  • 10:$0.5000
  • 100:$0.3060
  • 1000:$0.2370
  • 3000:$0.2020
  • 9000:$0.1880
  • 24000:$0.1780
  • 45000:$0.1740
CSD85301Q2T
DISTI # 595-CSD85301Q2T
MOSFET Dual N-Channel NexFET Pwr MOSFET
RoHS: Compliant
1745
  • 1:$0.6000
  • 10:$0.5000
  • 100:$0.3200
  • 250:$0.3200
  • 1000:$0.2560
  • 2000:$0.2320
  • 5000:$0.2160
  • 10000:$0.2080
  • 25000:$0.2000
CSD85301Q2T
DISTI # 2470183
MOSFET, DUAL N-CH, 20V, 5A, WSON-6
RoHS: Compliant
2
  • 500:£0.2410
  • 250:£0.2430
  • 100:£0.2440
  • 25:£0.4030
  • 5:£0.4280
CSD85301Q2T
DISTI # 2470183RL
MOSFET, DUAL N-CH, 20V, 5A, WSON-6
RoHS: Compliant
0
  • 10:$0.5070
  • 250:$0.5070
  • 1:$0.7920
CSD85301Q2T
DISTI # 2470183
MOSFET, DUAL N-CH, 20V, 5A, WSON-6
RoHS: Compliant
2
  • 10:$0.5070
  • 250:$0.5070
  • 1:$0.7920
Bild Teil # Beschreibung
CSD85302L

Mfr.#: CSD85302L

OMO.#: OMO-CSD85302L

MOSFET 20V Dual N ch MOSFET
CSD85312Q3E

Mfr.#: CSD85312Q3E

OMO.#: OMO-CSD85312Q3E

MOSFET Dual 20V N-CH Pwr MOSFETs
CSD85301Q2

Mfr.#: CSD85301Q2

OMO.#: OMO-CSD85301Q2

MOSFET CSD85301Q2 Dual N- Channel Power MOSFET
CSD85301Q2T

Mfr.#: CSD85301Q2T

OMO.#: OMO-CSD85301Q2T

MOSFET Dual N-Channel NexFET Pwr MOSFET
CSD85302LT

Mfr.#: CSD85302LT

OMO.#: OMO-CSD85302LT

MOSFET 20V Dual N ch MOSFET
CSD85302LT

Mfr.#: CSD85302LT

OMO.#: OMO-CSD85302LT-TEXAS-INSTRUMENTS

MOSFET 2N-CH
CSD85301Q2T

Mfr.#: CSD85301Q2T

OMO.#: OMO-CSD85301Q2T-TEXAS-INSTRUMENTS

IGBT Transistors MOSFET Dual N-Channel NexFET Pwr MOSFET
CSD85301Q2

Mfr.#: CSD85301Q2

OMO.#: OMO-CSD85301Q2-TEXAS-INSTRUMENTS

RF Bipolar Transistors MOSFET CSD85301Q2 Dual N- Channel Power MOSFET
CSD85302L

Mfr.#: CSD85302L

OMO.#: OMO-CSD85302L-TEXAS-INSTRUMENTS

Trans MOSFET N-CH 4-Pin PICOSTAR T/R
CSD85312Q3E

Mfr.#: CSD85312Q3E

OMO.#: OMO-CSD85312Q3E-TEXAS-INSTRUMENTS

MOSFET 2N-CH 20V 39A 8VSON
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von CSD85301Q2T dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,27 $
0,27 $
10
0,26 $
2,56 $
100
0,24 $
24,30 $
500
0,23 $
114,75 $
1000
0,22 $
216,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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