PartNumber | CSD85302L | CSD85301Q2 | CSD85301Q2T |
Description | MOSFET 20V Dual N ch MOSFET | MOSFET CSD85301Q2 Dual N- Channel Power MOSFET | MOSFET Dual N-Channel NexFET Pwr MOSFET |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PICOSTAR-4 | WSON-FET-6 | WSON-FET-6 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
Id Continuous Drain Current | 7 A | 8 A | 5 A |
Rds On Drain Source Resistance | 24 mOhms | 27 mOhms | 27 mOhms |
Vgs th Gate Source Threshold Voltage | 680 mV | 600 mV | 600 mV |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 6 nC | 5.4 nC, 5.4 nC | 5.4 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.7 W | 2.3 W | 2.3 W |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | - |
Tradename | NexFET | NexFET | NexFET |
Packaging | Reel | Reel | Reel |
Height | 0.22 mm | 0.75 mm | 0.75 mm |
Length | 1.35 mm | 2 mm | 2 mm |
Series | CSD85302L | CSD85301Q2 | CSD85301Q2 |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Width | 1.35 mm | 2 mm | 2 mm |
Brand | Texas Instruments | Texas Instruments | Texas Instruments |
Fall Time | 99 ns | 15 ns, 15 ns | 15 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 54 ns | 26 ns, 26 ns | 26 ns |
Factory Pack Quantity | 3000 | 3000 | 250 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 173 ns | 14 ns, 14 ns | 14 ns |
Typical Turn On Delay Time | 37 ns | 6 ns, 6 ns | 6 ns |
Unit Weight | 0.000042 oz | 0.000342 oz | 0.000342 oz |
Forward Transconductance Min | - | 20 S, 20 S | - |