SI2312BDS-T1-GE3-CUT TAPE

SI2312BDS-T1-GE3-CUT TAPE
Mfr. #:
SI2312BDS-T1-GE3-CUT TAPE
Hersteller:
Vishay Intertechnologies
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2312BDS-T1-GE3-CUT TAPE Datenblatt
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Produkteigenschaft
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Tags
SI2312BDS-T, SI2312BDS, SI2312B, SI2312, SI231, SI23, SI2
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SI2312BDS-T1-GE3
DISTI # V72:2272_09216793
Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant
1161
  • 1000:$0.2155
  • 500:$0.2783
  • 250:$0.3181
  • 100:$0.3534
  • 25:$0.4250
  • 10:$0.5194
  • 1:$0.6006
SI2312BDS-T1-GE3
DISTI # V36:1790_09216793
Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant
0
    SI2312BDS-T1-GE3
    DISTI # SI2312BDS-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    164421In Stock
    • 1000:$0.1798
    • 500:$0.2327
    • 100:$0.2961
    • 10:$0.3970
    • 1:$0.4600
    SI2312BDS-T1-GE3
    DISTI # SI2312BDS-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    164421In Stock
    • 1000:$0.1798
    • 500:$0.2327
    • 100:$0.2961
    • 10:$0.3970
    • 1:$0.4600
    SI2312BDS-T1-GE3
    DISTI # SI2312BDS-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    162000In Stock
    • 30000:$0.1369
    • 15000:$0.1386
    • 6000:$0.1489
    • 3000:$0.1592
    SI2312BDS-T1-GE3
    DISTI # 33707813
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
    RoHS: Compliant
    3000
    • 3000:$0.1702
    SI2312BDS-T1-GE3
    DISTI # 32142891
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
    RoHS: Compliant
    1161
    • 1000:$0.2555
    • 500:$0.3230
    • 250:$0.4197
    • 100:$0.4239
    • 35:$0.5696
    SI2312BDS-T1-GE3
    DISTI # 30601987
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
    RoHS: Compliant
    49
    • 30:$0.4259
    SI2312BDS-T1-GE3
    DISTI # SI2312BDS-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.1254
    • 18000:$0.1288
    • 12000:$0.1325
    • 6000:$0.1381
    • 3000:$0.1424
    SI2312BDS-T1-GE3
    DISTI # 16P3709
    Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 5A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,MSL:- RoHS Compliant: Yes0
    • 1000:$0.2180
    • 500:$0.2820
    • 250:$0.3130
    • 100:$0.3430
    • 50:$0.4030
    • 25:$0.4630
    • 1:$0.6060
    SI2312BDS-T1-GE3
    DISTI # 29X0523
    Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 3.9A, SOT-23-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:3Pins,MSL:-RoHS Compliant: Yes0
    • 50000:$0.1680
    • 30000:$0.1760
    • 20000:$0.1890
    • 10000:$0.2020
    • 5000:$0.2190
    • 1:$0.2240
    SI2312BDS-T1-GE3.
    DISTI # 16AC0252
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No0
    • 50000:$0.1680
    • 30000:$0.1760
    • 20000:$0.1890
    • 10000:$0.2020
    • 5000:$0.2190
    • 1:$0.2240
    SI2312BDS-T1-GE3
    DISTI # 781-SI2312BDS-T1-GE3
    Vishay IntertechnologiesMOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
    RoHS: Compliant
    9187
    • 1:$0.6100
    • 10:$0.4690
    • 100:$0.3480
    • 500:$0.2860
    • 1000:$0.2210
    • 3000:$0.2010
    SI2312BDS-T1-GE3Vishay IntertechnologiesSingle N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3
    RoHS: Compliant
    75Cut Tape/Mini-Reel
    • 1:$0.2900
    • 100:$0.1880
    • 250:$0.1720
    • 500:$0.1610
    • 1500:$0.1460
    SI2312BDS-T1-GE3Vishay Intertechnologies 6000
      SI2312BDST1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
      RoHS: Compliant
      45000
        SI2312BDS-T1-GE3Vishay IntertechnologiesMOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
        RoHS: Compliant
        Americas - 3000
          SI2312BDS-T1-GE3
          DISTI # XSFP00000063435
          Vishay Siliconix 
          RoHS: Compliant
          6000 in Stock0 on Order
          • 6000:$0.2255
          • 3000:$0.2480
          Bild Teil # Beschreibung
          SI2312BDS-T1-E3

          Mfr.#: SI2312BDS-T1-E3

          OMO.#: OMO-SI2312BDS-T1-E3

          MOSFET N-Channel 20V 3.9A
          SI2312BDS-T1-GE3

          Mfr.#: SI2312BDS-T1-GE3

          OMO.#: OMO-SI2312BDS-T1-GE3

          MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
          SI2312BDS-T1-E3

          Mfr.#: SI2312BDS-T1-E3

          OMO.#: OMO-SI2312BDS-T1-E3-VISHAY

          MOSFET N-CH 20V 3.9A SOT23-3
          SI2312BDS-T1-GE3

          Mfr.#: SI2312BDS-T1-GE3

          OMO.#: OMO-SI2312BDS-T1-GE3-VISHAY

          MOSFET N-CH 20V 3.9A SOT23-3
          SI2312BDS-T1-E3-CUT TAPE

          Mfr.#: SI2312BDS-T1-E3-CUT TAPE

          OMO.#: OMO-SI2312BDS-T1-E3-CUT-TAPE-1190

          Neu und Original
          SI2312BDS-T1-GE3-CUT TAPE

          Mfr.#: SI2312BDS-T1-GE3-CUT TAPE

          OMO.#: OMO-SI2312BDS-T1-GE3-CUT-TAPE-1190

          Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          4000
          Menge eingeben:
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