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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FDI025N06 DISTI # FDI025N06-ND | ON Semiconductor | MOSFET N-CH 60V 265A TO-262 RoHS: Compliant Min Qty: 400 Container: Tube | Limited Supply - Call | |
| FDI025N06 DISTI # FDI025N06 | ON Semiconductor | - Bulk (Alt: FDI025N06) RoHS: Compliant Min Qty: 110 Container: Bulk | Americas - 0 |
|
| FDI025N06 DISTI # 512-FDI025N06 | ON Semiconductor | MOSFET 60V N-Channel PowerTrench RoHS: Compliant | 0 | |
| FDI025N06 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 120A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 29 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: FDI040N06 OMO.#: OMO-FDI040N06 |
MOSFET PT3 Low Qg 60V, 4.0Mohm |
|
Mfr.#: FDI025N06 |
MOSFET N-CH 60V 265A TO-262 |
|
|
Mfr.#: FDI0302-100K OMO.#: OMO-FDI0302-100K-1190 |
Neu und Original |
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Mfr.#: FDI038AN OMO.#: OMO-FDI038AN-1190 |
Neu und Original |
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Mfr.#: FDI038AN06A0_NL OMO.#: OMO-FDI038AN06A0-NL-1190 |
Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB |
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Mfr.#: FDI038AN06AD OMO.#: OMO-FDI038AN06AD-1190 |
Neu und Original |
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|
Mfr.#: FDI040N06 |
MOSFET N-CH 60V 120A I2PAK |
|
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Mfr.#: FDI044AN03L OMO.#: OMO-FDI044AN03L-1190 |
Neu und Original |
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Mfr.#: FDI047AN08 OMO.#: OMO-FDI047AN08-1190 |
Neu und Original |
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Mfr.#: FDI047AN08AO OMO.#: OMO-FDI047AN08AO-1190 |
Neu und Original |