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NSBA123JDXV6T1

NSBA123JDXV6T1
Mfr. #:
NSBA123JDXV6T1
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NSBA123JDXV6T1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBA123JDXV6T1 DatasheetNSBA123JDXV6T1 Datasheet (P4-P6)NSBA123JDXV6T1 Datasheet (P7-P9)NSBA123JDXV6T1 Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
N
Aufbau:
Dual
Polarität des Transistors:
PNP
Typischer Eingangswiderstand:
2.2 kOhms
Typisches Widerstandsverhältnis:
0.047
Montageart:
SMD/SMT
Paket / Koffer:
SOT-563-6
DC-Kollektor/Basisverstärkung hfe Min:
80
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
- 0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
357 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Spule
DC-Stromverstärkung hFE Max:
80
Höhe:
0.55 mm
Länge:
1.6 mm
Breite:
1.2 mm
Marke:
ON Semiconductor
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000106 oz
Tags
NSBA123JDX, NSBA123JD, NSBA123J, NSBA123, NSBA12, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
NSBA123JDXV6T1
DISTI # NSBA123JDXV6TOSTR-ND		ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
RoHS: Not compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    NSBA123JDXV6T1
    DISTI # NSBA123JDXV6TOSCT-ND    		ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
    RoHS: Not compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      NSBA123JDXV6T1G
      DISTI # NSBA123JDXV6T1GOSTR-ND      		ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
      RoHS: Compliant
      Min Qty: 4000
      Container: Tape & Reel (TR)      		Limited Supply - Call
        NSBA123JDXV6T1G
        DISTI # NSBA123JDXV6T1GOSCT-ND        		ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
        RoHS: Compliant
        Min Qty: 1
        Container: Cut Tape (CT)        		Limited Supply - Call
          NSBA123JDXV6T1
          DISTI # 863-NSBA123JDXV6T1          		ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
          RoHS: Not compliant          		0
            NSBA123JDXV6T1G
            DISTI # 863-NSBA123JDXV6T1G            		ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
            RoHS: Compliant            		0
              NSBA123JDXV6T1ON SemiconductorSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
              RoHS: Compliant              		171949
              • 100:$0.0400
              • 500:$0.0400
              • 1000:$0.0400
              • 1:$0.0500
              • 25:$0.0500
              NSBA123JDXV6T1GON SemiconductorSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
              RoHS: Compliant              		283000
              • 100:$0.0400
              • 500:$0.0400
              • 1000:$0.0400
              • 1:$0.0500
              • 25:$0.0500
              Bild Teil # Beschreibung
              NSBA123JDXV6T5G

              Mfr.#: NSBA123JDXV6T5G

              OMO.#: OMO-NSBA123JDXV6T5G

              		 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
              NSBA123JF3T5G

              Mfr.#: NSBA123JF3T5G

              OMO.#: OMO-NSBA123JF3T5G

              		 Bipolar Transistors - Pre-Biased SOT-1123 PBRT TRANSISTOR
              NSBA123JDXV6T1G

              Mfr.#: NSBA123JDXV6T1G

              OMO.#: OMO-NSBA123JDXV6T1G

              		 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
              NSBA123JDXV6T1

              Mfr.#: NSBA123JDXV6T1

              OMO.#: OMO-NSBA123JDXV6T1

              		 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
              NSBA123JDXV6T1

              Mfr.#: NSBA123JDXV6T1

              OMO.#: OMO-NSBA123JDXV6T1-ON-SEMICONDUCTOR

              		 TRANS 2PNP PREBIAS 0.5W SOT563
              NSBA123JDXV6T1G

              Mfr.#: NSBA123JDXV6T1G

              OMO.#: OMO-NSBA123JDXV6T1G-ON-SEMICONDUCTOR

              		 TRANS 2PNP PREBIAS 0.5W SOT563
              NSBA123JDXV6T5

              Mfr.#: NSBA123JDXV6T5

              OMO.#: OMO-NSBA123JDXV6T5-1190

              		 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
              NSBA123JF3T5G

              Mfr.#: NSBA123JF3T5G

              OMO.#: OMO-NSBA123JF3T5G-ON-SEMICONDUCTOR

              		 Bipolar Transistors - Pre-Biased SOT-1123 PBRT TRANSISTOR
              NSBA123JDP6T5G

              Mfr.#: NSBA123JDP6T5G

              OMO.#: OMO-NSBA123JDP6T5G-ON-SEMICONDUCTOR

              		 Bipolar Transistors - Pre-Biased DUAL PBRT
              NSBA123JDXV6T5G

              Mfr.#: NSBA123JDXV6T5G

              OMO.#: OMO-NSBA123JDXV6T5G-ON-SEMICONDUCTOR

              		 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              1500
              Menge eingeben:
              Der aktuelle Preis von NSBA123JDXV6T1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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