OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SIHP38N60E-GE3

SIHP38N60E-GE3
Mfr. #:
SIHP38N60E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP38N60E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP38N60E-GE3 DatasheetSIHP38N60E-GE3 Datasheet (P4-P6)SIHP38N60E-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIHP38N60E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220AB-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
43 A
Rds On - Drain-Source-Widerstand:
56 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
122 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
313 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
E
Marke:
Vishay / Siliconix
Abfallzeit:
50 ns
Produktart:
MOSFET
Anstiegszeit:
58 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
116 ns
Typische Einschaltverzögerungszeit:
33 ns
Gewichtseinheit:
0.063493 oz
Tags
SIHP3, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 43A 3-Pin(3+Tab) TO-220AB
***i-Key
MOSFET N-CH 600V 43A TO220AB
***ark
N-Channel 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHP38N60E-GE3
DISTI # V99:2348_17597460		Vishay IntertechnologiesPower MOSFET180
  • 1000:$3.5200
  • 100:$4.7600
  • 25:$5.4060
  • 10:$5.8789
  • 1:$7.2248
SIHP38N60E-GE3
DISTI # SIHP38N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 43A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		626In Stock
  • 1000:$3.7521
  • 100:$4.9472
  • 25:$5.6976
  • 10:$5.9760
  • 1:$6.6100
SIHP38N60E-GE3
DISTI # 31992690		Vishay IntertechnologiesPower MOSFET550
  • 4000:$3.4986
  • 2000:$3.6531
  • 1000:$3.7521
SIHP38N60E-GE3
DISTI # 31985472		Vishay IntertechnologiesPower MOSFET180
  • 1000:$3.5200
  • 100:$4.7600
  • 25:$5.4060
  • 10:$5.8789
  • 2:$7.2248
SIHP38N60E-GE3
DISTI # SIHP38N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 43A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP38N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 1000
  • 10000:$3.2900
  • 6000:$3.3900
  • 4000:$3.4900
  • 2000:$3.6900
  • 1000:$3.7900
SIHP38N60E-GE3
DISTI # SIHP38N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 43A 3-Pin TO-220AB (Alt: SIHP38N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€3.2900
  • 500:€3.3900
  • 50:€3.4900
  • 100:€3.4900
  • 25:€3.8900
  • 10:€4.7900
  • 1:€6.0900
SIHP38N60E-GE3
DISTI # 78-SIHP38N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant		929
  • 1:$6.6200
  • 10:$5.9600
  • 25:$5.4300
  • 100:$4.9000
  • 250:$4.5100
  • 500:$4.1100
Bild Teil # Beschreibung
FCP067N65S3

Mfr.#: FCP067N65S3

OMO.#: OMO-FCP067N65S3

 MOSFET 650V 44A N-Channel SuperFET MOSFET
695402250128

Mfr.#: 695402250128

OMO.#: OMO-695402250128

 Pluggable Terminal Blocks WR-LECO 2Pin, Angled 3A Hermaphroditic
FCP067N65S3

Mfr.#: FCP067N65S3

OMO.#: OMO-FCP067N65S3-ON-SEMICONDUCTOR

 MOSFET N-CH 650V 44A TO220
AT42QT1010-TSHR

Mfr.#: AT42QT1010-TSHR

OMO.#: OMO-AT42QT1010-TSHR-MICROCHIP-TECHNOLOGY

 Capacitive Touch Sensors One-Channel Touch Sensor IC
695402250128

Mfr.#: 695402250128

OMO.#: OMO-695402250128-WURTH-ELECTRONICS

 CONN, HERMAPHRODITIC, 2POS, 1ROW, 2.54MM
Verfügbarkeit
Aktie:
929
Auf Bestellung:
2912
Menge eingeben:
Der aktuelle Preis von SIHP38N60E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,62 $
6,62 $
10
5,96 $
59,60 $
25
5,43 $
135,75 $
100
4,90 $
490,00 $
250
4,51 $
1 127,50 $
500
4,11 $
2 055,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
  • SUM70101EL 100 V P-Channel MOSFET
    SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • SIRA20DP TrenchFET® Gen IV MOSFET
    SIRA20DP TrenchFET® Gen IV MOSFET
    Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
  • P-Channel MOSFETs
    P-Channel MOSFETs
    Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
  • Compare SIHP38N60E-GE3
    Compare SIHP38N60E-GE3
    SIHP30N60AELGE3 vs SIHP30N60E vs SIHP30N60EE3
  • SiP32452, SiP32453 Load Switch
    SiP32452, SiP32453 Load Switch
    Vishay's load switches have a low input logic control threshold and a fast turn on time.
  • PowerPAIR®
    PowerPAIR®
    Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
More Newest Products
Top