 |  | | |
| PartNumber | 2SJ360(F) | 2SJ360 | 2SJ360(F)-ND |
| Description | MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V | ||
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-62-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 1 A | - | - |
| Rds On Drain Source Resistance | 730 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 4.6 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | 2SJ360 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 2.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 17 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
2SJ360(F) | MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V | |
| 2SJ360 | Neu und Original | ||
| 2SJ360(F) | Neu und Original | ||
| 2SJ360(T2LVALEO,ZF) | Neu und Original | ||
| 2SJ360(T2LVALEOZF) | Neu und Original | ||
| 2SJ360(TE12L | Neu und Original | ||
| 2SJ360(TE12L F) | Neu und Original | ||
| 2SJ360(TE12L,F) | Neu und Original | ||
| 2SJ360(TE12LF) | Neu und Original | ||
| 2SJ360TE12LF | Trans MOSFET P-CH Si 60V 1A 4-Pin(3+Tab) PW-Mini T/R | ||
| 2SJ360TE12L F | Neu und Original | ||
| 2SJ360(F)-ND | Neu und Original | ||
| 2SJ360(TE12L,F)-ND | Neu und Original |