 | |  | |
| PartNumber | BSL211SPH6327XTSA1 | BSL211SP | BSL211SPL6327HTSA1 |
| Description | MOSFET SMALL SIGNAL+P-CH | MOSFET P-Ch -20V -4.7A TSOP-6 OptiMOS P | MOSFET P-CH 20V 4.7A TSOP-6 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | N | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-6 | TSOP-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 4.7 A | 4.7 A | - |
| Rds On Drain Source Resistance | 110 mOhms | 67 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Qg Gate Charge | - 1.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2 W | 2 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3 mm | 3 mm | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 1.5 mm | 1.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 6.2 S | - | - |
| Fall Time | 23.3 ns | 23.3 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13.9 ns | 13.9 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | 25 ns | - |
| Typical Turn On Delay Time | 8.7 ns | 8.7 ns | - |
| Part # Aliases | BSL211SP H6327 SP001100652 | BSL211SPH6327XTSA1 SP001100652 | - |
| Unit Weight | 0.010582 oz | 0.000705 oz | - |
| Tradename | - | OptiMOS | - |
| Series | - | OptiMOS P | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSL211SPH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSL215CH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSL215C H6327 | MOSFET SMALL SIGNAL+P-CH | ||
| BSL214NH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSL211SP | MOSFET P-CH 20V 4.7A 6-TSOP | ||
| BSL211SPL6327HTSA1 | MOSFET P-CH 20V 4.7A TSOP-6 | ||
| BSL211SPT | MOSFET P-CH 20V 4.7A 6-TSOP | ||
| BSL214NL6327HTSA1 | MOSFET 2N-CH 20V 1.5A 6TSOP | ||
| BSL215CL6327HTSA1 | MOSFET N/P-CH 20V 1.5A TSOP-6 | ||
| BSL215PL6327HTSA1 | MOSFET 2P-CH 20V 1.5A TSOP-6 | ||
| BSL211SPH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
| BSL215CH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
| BSL214NH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | ||
Infineon Technologies |
BSL211SP | MOSFET P-Ch -20V -4.7A TSOP-6 OptiMOS P | |
| BSL211 | Neu und Original | ||
| BSL211SP L6327 | Neu und Original | ||
| BSL211SP E6327 | Neu und Original | ||
| BSL211SP H6327 | Neu und Original | ||
| BSL211SP(INFINEON) | Neu und Original | ||
| BSL211SPE6327 | Neu und Original | ||
| BSL211SPL6327 | Neu und Original | ||
| BSL214N | Neu und Original | ||
| BSL214N H6327 | Trans MOSFET N-CH 20V 1.5A 6-Pin TSOP T/R (Alt: BSL214N H6327) | ||
| BSL214N L6327 | MOSFET N-Ch 20V 1.5A TSOP-6 | ||
| BSL214NH6327 | Neu und Original | ||
| BSL214NL6327 | Trans MOSFET N-CH 20V 1.5A 6-Pin TSOP T/R - Bulk (Alt: BSL214NL6327) | ||
| BSL215C | Neu und Original | ||
| BSL215C H6327 | MOSFET SMALL SIGNAL+P-CH | ||
| BSL215C L6327 | MOSFET N and P-Ch 20V 1.5A TSOP-6 | ||
| BSL215CH6327 | Neu und Original | ||
| BSL215CL6327 | Neu und Original | ||
| BSL215CL6327XT | Neu und Original | ||
| BSL215P | Neu und Original | ||
| BSL215P L6327 | MOSFET P-KANAL | ||
| BSL215PH6327 | Neu und Original | ||
| BSL215PL6327 | Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSL211SP L6327 | IGBT Transistors MOSFET P-Ch -20V 4.7A TSOP-6 |