BSM

BSM250D17P2E004 vs BSM20GP60 vs BSM20GP60BOSA1

 
PartNumberBSM250D17P2E004BSM20GP60BSM20GP60BOSA1
DescriptionDiscrete Semiconductor Modules 1700V Vdss; 250A Id SiC Pwr ModuleIGBT Modules 600V 20A PIMIGBT 2 LOW POWER ECONO2-5
ManufacturerROHM SemiconductorInfineon-
Product CategoryDiscrete Semiconductor ModulesIGBT Modules-
RoHSYY-
ProductPower Semiconductor ModulesIGBT Silicon Modules-
TypeHalf Bridge Module--
Vgs Gate Source Voltage- 6 V, 22 V--
Mounting StyleScrew MountChassis Mount-
Package / CaseModuleEconoPIM2-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 125 C-
SeriesBSMx--
PackagingTrayTray-
ConfigurationHalf-BridgeHex-
BrandROHM SemiconductorInfineon Technologies-
Transistor PolarityN-Channel--
Typical Delay Time55 ns--
Fall Time70 ns--
Id Continuous Drain Current250 A--
Pd Power Dissipation1800 W130 W-
Product TypeDiscrete Semiconductor ModulesIGBT Modules-
Rise Time55 ns--
Factory Pack Quantity410-
SubcategoryDiscrete Semiconductor ModulesIGBTs-
Typical Turn Off Delay Time195 ns--
Typical Turn On Delay Time55 ns--
Vds Drain Source Breakdown Voltage1700 V--
Vgs th Gate Source Threshold Voltage1.6 V--
Collector Emitter Voltage VCEO Max-600 V-
Collector Emitter Saturation Voltage-1.95 V-
Continuous Collector Current at 25 C-35 A-
Gate Emitter Leakage Current-300 nA-
Height-17 mm-
Length-107.5 mm-
Width-45 mm-
Maximum Gate Emitter Voltage-20 V-
Part # Aliases-BSM20GP60BOSA1 SP000100377-
  • Beginnen mit
  • BSM 652
Hersteller Teil # Beschreibung RFQ
BSM250D17P2E004 Discrete Semiconductor Modules 1700V Vdss; 250A Id SiC Pwr Module
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BSM250D17P2E004 HALF BRIDGE MODULE CONSISTING OF
Infineon Technologies
Infineon Technologies
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