 |  |  | |
| PartNumber | BUK962R8-60E,118 | BUK962R8-60E118 | BUK962R8-30B,118 |
| Description | MOSFET N-channel TrenchMOS logic level FET | Now Nexperia BUK962R8-60E - Power Field-Effect Transistor, 120A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | MOSFET HIGH PERF TRENCHMOS |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 2.29 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
| Vgs Gate Source Voltage | 15 V | - | - |
| Qg Gate Charge | 96 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 324 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 81 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 88 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 115 ns | - | - |
| Typical Turn On Delay Time | 53 ns | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BUK962R8-60E,118 | MOSFET N-channel TrenchMOS logic level FET | |
| BUK962R8-60E,118 | Darlington Transistors MOSFET N-channel TrenchMOS logic level FET | ||
| BUK962R8-30B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK962R8-60E118 | Now Nexperia BUK962R8-60E - Power Field-Effect Transistor, 120A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |