 | |  | |
| PartNumber | CSD23381F4 | CSD23381F4T | CSD23381F |
| Description | MOSFET 12V P-CH FemtoFET MOSFET | MOSFET 12V,P-Ch FemtoFET MOSFET | |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PICOSTAR-3 | PICOSTAR-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 12 V | 12 V | - |
| Id Continuous Drain Current | 2.3 A | 2.3 A | - |
| Rds On Drain Source Resistance | 175 mOhms | 970 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 700 mV | 950 mV | - |
| Vgs Gate Source Voltage | 4.5 V | 8 V | - |
| Qg Gate Charge | 1.14 nC | 1.14 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW | 500 mW (1/2 W) | - |
| Configuration | Single | Single | Single Channel |
| Channel Mode | Enhancement | - | - |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Height | 0.35 mm | 0.35 mm | - |
| Length | 1 mm | 1 mm | - |
| Series | CSD23381F4 | CSD23381F4 | NexFET |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 0.64 mm | 0.64 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Forward Transconductance Min | 2 S | 2 S | - |
| Fall Time | 7 ns | 7 ns | 7 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3.9 ns | 3.9 ns | 3.9 ns |
| Factory Pack Quantity | 3000 | 250 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18 ns | 18 ns | 18 ns |
| Typical Turn On Delay Time | 4.5 ns | 4.5 ns | 4.5 ns |
| Unit Weight | 0.000014 oz | 0.000014 oz | - |
| Package Case | - | - | 3-XFDFN |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 3-PICOSTAR |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 500mW |
| Drain to Source Voltage Vdss | - | - | 12V |
| Input Capacitance Ciss Vds | - | - | 236pF @ 6V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 2.3A (Ta) |
| Rds On Max Id Vgs | - | - | 175 mOhm @ 500mA, 4.5V |
| Vgs th Max Id | - | - | 1.2V @ 250μA |
| Gate Charge Qg Vgs | - | - | 1.14nC @ 4.5V |
| Pd Power Dissipation | - | - | 500 mW |
| Vgs Gate Source Voltage | - | - | - 8 V |
| Id Continuous Drain Current | - | - | - 2.3 A |
| Vds Drain Source Breakdown Voltage | - | - | - 12 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 950 mV |
| Rds On Drain Source Resistance | - | - | 175 mOhms |
| Qg Gate Charge | - | - | 1.14 nC |
| Forward Transconductance Min | - | - | 2 S |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Texas Instruments |
CSD23382F4 | MOSFET P-Channel MOSFET | |
| CSD23381F4 | MOSFET 12V P-CH FemtoFET MOSFET | ||
| CSD23382F4T | MOSFET P-Ch NexFET Power MOSFET | ||
| CSD23381F4T | MOSFET 12V,P-Ch FemtoFET MOSFET | ||
| CSD23381F | Neu und Original | ||
| CSD23382F4T | MOSFET P-CH 12V 3.5A 3PICOSTAR | ||
| CSD23381F4T | MOSFET P-CH 12V 3PICOSTAR | ||
| CSD23381F4 | MOSFET P-CH 12V 3PICOSTAR | ||
| CSD23382F4 | MOSFET P-CH 12V 3.5A 3PICOSTAR |