PartNumber | DMN63D8LDWQ-7 | DMN63D8LDW-13 | DMN63D8L-7 |
Description | MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA | MOSFET 30V DUAL N-CH MOSFET | MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-363-6 | SOT-363-6 | SOT-23-3 |
Number of Channels | 2 Channel | 2 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | 30 V |
Id Continuous Drain Current | 220 mA | - | 350 mA |
Rds On Drain Source Resistance | 2.8 Ohms, 2.8 Ohms | - | 2.8 Ohms |
Vgs th Gate Source Threshold Voltage | 800 mV | - | 800 mV |
Vgs Gate Source Voltage | 20 V | - | 10 V |
Qg Gate Charge | 870 pC, 870 pC | - | 0.9 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 300 mW | - | 520 mW |
Configuration | Dual | Dual | Single |
Channel Mode | Enhancement | - | Enhancement |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | Reel |
Series | DMN63 | DMN63 | DMN63D8L |
Transistor Type | 2 N-Channel | 2 N-Channel | 1 N-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Forward Transconductance Min | 80 mS, 80 mS | - | 80 mS |
Fall Time | 6.3 ns, 6.3 ns | - | 16.7 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 3.2 ns, 3.2 ns | - | 3.9 ns |
Factory Pack Quantity | 3000 | 10000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 12 ns, 12 ns | - | 11.4 ns |
Typical Turn On Delay Time | 3.3 ns, 3.3 ns | - | 2.3 ns |
Unit Weight | 0.000265 oz | 0.000265 oz | 0.000282 oz |
Height | - | - | 0.975 mm |
Length | - | - | 2.9 mm |
Width | - | - | 1.3 mm |