DMN63D8LDW-7

Mfr. #:: DMN63D8LDW-7
Hersteller:: Diodes Incorporated
Beschreibung:: Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: DMN63D8LDW-7 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: DMN63D8LDW-7 Datasheet DMN63D8LDW-7 Datasheet (P4-P6)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Eingebaute Dioden

Produktkategorie: FETs - Arrays

Serie: DMN63D8

Verpackung: Digi-ReelR Alternative Verpackung

Gewichtseinheit: 0.000212 oz

Montageart: SMD/SMT

Paket-Koffer: 6-TSSOP, SC-88, SOT-363

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: SOT-363

Aufbau: Dual

FET-Typ: 2 N-Channel (Dual)

Leistung max: 300mW

Transistor-Typ: 2 N-Channel

Drain-zu-Source-Spannung-Vdss: 30V

Eingangskapazität-Ciss-Vds: 22pF @ 25V

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 220mA

Rds-On-Max-Id-Vgs: 2.8 Ohm @ 250mA, 10V

Vgs-th-Max-Id: 1.5V @ 250μA

Gate-Lade-Qg-Vgs: 870nC @ 10V

Pd-Verlustleistung: 300 mW

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 6.3 ns

Anstiegszeit: 3.2 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 260 mA

Vds-Drain-Source-Breakdown-Voltage: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.5 V

Rds-On-Drain-Source-Widerstand: 2.8 Ohms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 12 ns

Typische-Einschaltverzögerungszeit: 3.3 ns

Qg-Gate-Ladung: 0.87 nC

Vorwärts-Transkonduktanz-Min: 80 mS

Kanal-Modus: Erweiterung

Tags: DMN63D8LDW-7, DMN63D8LD, DMN63D8, DMN63D, DMN63, DMN6, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN63D8LDW-7 Beschreibung

***Components: In a Pack of 100, Dual N-Channel MOSFET, 260 mA, 30 V, 6-Pin SOT-363 Diodes Inc DMN63D8LDW-7

***ure Electronics: Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363

***ical: Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R

***ark: Mosfet Bvdss: 41V~60V Sot363 T&r 3K Rohs Compliant: Yes

***p One Stop Global: Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R

***ied Electronics & Automation: Dual N-Ch Enhancement MOSFET SOT-363

***et: MOSFET BVDSS: 41V-60V SOT363 T&R 3K

*** Source Electronics: MOSFET 2N-CH 30V 0.22A SOT363

***ronik: N+N CH MOS+ESD 30V 0,22A SOT363

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:400mW; Transistor Case Style:SOT-363; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET AEC-Q101, CAN-N DOPP. 30V, SOT363; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:260mA; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):2.8ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.5V; Dissipazione di Potenza Pd:400mW; Modello Case Transistor:SOT-363; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
DMN63D8LDW-7 DISTI # V72:2272_06697530	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R RoHS: Compliant	790	500:$0.0919 250:$0.1218 100:$0.1517 25:$0.1816 10:$0.1900 1:$0.2826
DMN63D8LDW-7 DISTI # DMN63D8LDW-7CT-ND	Diodes Incorporated	MOSFET 2N-CH 30V 0.22A SOT363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	408917In Stock	1000:$0.0647 500:$0.0952 100:$0.1776 10:$0.3170 1:$0.3500
DMN63D8LDW-7 DISTI # DMN63D8LDW-7DKR-ND	Diodes Incorporated	MOSFET 2N-CH 30V 0.22A SOT363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	408917In Stock	1000:$0.0647 500:$0.0952 100:$0.1776 10:$0.3170 1:$0.3500
DMN63D8LDW-7 DISTI # DMN63D8LDW-7TR-ND	Diodes Incorporated	MOSFET 2N-CH 30V 0.22A SOT363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	402000In Stock	3000:$0.0567
DMN63D8LDW-7 DISTI # 31062359	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R RoHS: Compliant	790	500:$0.1144 250:$0.1370 100:$0.1596 63:$0.1821
DMN63D8LDW-7 DISTI # DMN63D8LDW-7	Diodes Incorporated	Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R (Alt: DMN63D8LDW-7) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 21000	3000:€0.0488 6000:€0.0354 12000:€0.0330 18000:€0.0289 30000:€0.0270
DMN63D8LDW-7 DISTI # DMN63D8LDW-7	Diodes Incorporated	Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R (Alt: DMN63D8LDW-7) RoHS: Compliant Min Qty: 18000 Container: Tape and Reel	Asia - 0
DMN63D8LDW-7 DISTI # DMN63D8LDW-7	Diodes Incorporated	Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R - Cut TR (SOS) (Alt: DMN63D8LDW-7) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.2089 30:$0.1729 75:$0.1119 150:$0.0769 375:$0.0719 750:$0.0619 1500:$0.0619
DMN63D8LDW-7 DISTI # DMN63D8LDW-7	Diodes Incorporated	Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R - Tape and Reel (Alt: DMN63D8LDW-7) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0589 6000:$0.0589 12000:$0.0589 18000:$0.0589 30000:$0.0589
DMN63D8LDW-7 DISTI # 70551252	Diodes Incorporated	Dual N-Ch Enhancement MOSFET SOT-363 RoHS: Compliant	0	500:$0.0720 1000:$0.0520 1500:$0.0460 3000:$0.0420
DMN63D8LDW-7	Diodes Incorporated	RoHS: Compliant	2999Cut Tape/Mini-Reel	1:$0.0620 100:$0.0450 250:$0.0430 500:$0.0410 1500:$0.0360
DMN63D8LDW-7	Diodes Incorporated	Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363 RoHS: Compliant	135000Reel	3000:$0.0326 9000:$0.0298 24000:$0.0283
DMN63D8LDW-7 DISTI # 621-DMN63D8LDW-7	Diodes Incorporated	MOSFET 30V DUAL N-CH MOSFET RoHS: Compliant	0	1:$0.3000 10:$0.2020 100:$0.0840 1000:$0.0580 3000:$0.0450
DMN63D8LDW-13 DISTI # 621-DMN63D8LDW-13	Diodes Incorporated	MOSFET 30V DUAL N-CH MOSFET RoHS: Compliant	0	10000:$0.0390
DMN63D8LDW-7 DISTI # 8222598P	Zetex / Diodes Inc	DUAL N-CH ENHANCEMENT MOSFET SOT-363, RL	12100	500:£0.0590 1000:£0.0430 1500:£0.0370 3000:£0.0340
DMN63D8LDW-7	Diodes Incorporated		2048
DMN63D8LDW-7	Diodes Incorporated		1056
DMN63D8LDW-7 DISTI # XSFP00000001360	Diodes Incorporated	SmallSignalField-EffectTransistor,0.3AI(D),50V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant	589547	3000:$0.1180 589547:$0.1073
DMN63D8LDW-7 DISTI # XSKDRABS0023562	DIODES INCORPORATED	RoHS: Compliant	15120	18000:$0.0386
DMN63D8LDW-7 DISTI # 2543518	Diodes Incorporated	MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363 RoHS: Compliant	2698	5:£0.1840 25:£0.1790 100:£0.0683 250:£0.0662 500:£0.0620
DMN63D8LDW-7 DISTI # C1S205700306030	Diodes Incorporated	Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R RoHS: Compliant	790	250:$0.1218 100:$0.1517 25:$0.1816

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: DMN63D8LDWQ-7 OMO.#: OMO-DMN63D8LDWQ-7	MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA
	Mfr.#: DMN63D1LT-13 OMO.#: OMO-DMN63D1LT-13	MOSFET MOSFETBVDSS: 41V-60V
	Mfr.#: DMN63D1LT-7 OMO.#: OMO-DMN63D1LT-7	MOSFET MOSFETBVDSS: 41V-60V
	Mfr.#: DMN63D1LV-13 OMO.#: OMO-DMN63D1LV-13	MOSFET MOSFETBVDSS: 41V-60V
	Mfr.#: DMN63D8L-7 OMO.#: OMO-DMN63D8L-7	MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW
	Mfr.#: DMN63D1LDW-13 OMO.#: OMO-DMN63D1LDW-13	MOSFET MOSFET BVDSS
	Mfr.#: DMN63D1L-7 OMO.#: OMO-DMN63D1L-7	MOSFET MOSFET BVDSS
	Mfr.#: DMN63D8LV-7-CUT TAPE OMO.#: OMO-DMN63D8LV-7-CUT-TAPE-1190	Neu und Original
	Mfr.#: DMN63D0LT-7 OMO.#: OMO-DMN63D0LT-7-DIODES	MOSFET MOSFET BVDSS: 61V-10 V-100V SOT523 T&R 3K
	Mfr.#: DMN63D8LDW-7 OMO.#: OMO-DMN63D8LDW-7-DIODES	Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von DMN63D8LDW-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,04 $~~; ~~0,04 $~~

10: ~~0,04 $~~; ~~0,36 $~~

100: ~~0,03 $~~; ~~3,40 $~~

500: ~~0,03 $~~; ~~16,05 $~~

1000: ~~0,03 $~~; ~~30,20 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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DMN63D8LDW-7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes