 |  | | |
| PartNumber | DN3535N8-G | DN3535N8 | DN3535N8-G-CUT TAPE |
| Description | MOSFET 350V 10Ohm | MOSFET 350V 10Ohm | |
| Manufacturer | Microchip | Microchip Technology | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-89-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 350 V | - | - |
| Id Continuous Drain Current | 230 mA | - | - |
| Rds On Drain Source Resistance | 10 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.6 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Depletion | Depletion | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | FET | - | - |
| Brand | Microchip Technology | - | - |
| Fall Time | 20 ns | 20 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | 20 ns | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | 20 ns | - |
| Typical Turn On Delay Time | 15 ns | 15 ns | - |
| Unit Weight | 0.001862 oz | 0.001862 oz | - |
| Series | - | - | - |
| Package Case | - | TO-243AA | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | TO-243AA (SOT-89) | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 1.6W | - |
| Drain to Source Voltage Vdss | - | 350V | - |
| Input Capacitance Ciss Vds | - | 360pF @ 25V | - |
| FET Feature | - | Depletion Mode | - |
| Current Continuous Drain Id 25°C | - | 230mA (Tj) | - |
| Rds On Max Id Vgs | - | 10 Ohm @ 150mA, 0V | - |
| Vgs th Max Id | - | - | - |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | 1.6 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 230 mA | - |
| Vds Drain Source Breakdown Voltage | - | 350 V | - |
| Rds On Drain Source Resistance | - | 10 Ohms | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip Technology |
DN3535N8-G | MOSFET 350V 10Ohm | |
| DN3535N8 | MOSFET 350V 10Ohm | ||
| DN3535N8-G | MOSFET N-CH 350V 0.23A SOT89-3 | ||
| DN3535N8-G-CUT TAPE | Neu und Original |