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| PartNumber | FQD19N10TM | FQD19N10TM,FQD19N10 | FQD19N10TM_F080 |
| Description | MOSFET 100V N-Ch QFET Logic Level | MOSFET N-CH 100V 15.6A DPAK | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 15.6 A | - | - |
| Rds On Drain Source Resistance | 100 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | FQD19N10 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 11 S | - | - |
| Fall Time | 65 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 150 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 7.5 ns | - | - |
| Part # Aliases | FQD19N10TM_NL | - | - |
| Unit Weight | 0.009184 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD19N10TM | MOSFET 100V N-Ch QFET Logic Level | |
ON Semiconductor |
FQD19N10TM | MOSFET N-CH 100V 15.6A DPAK | |
| FQD19N10TM_F080 | MOSFET N-CH 100V 15.6A DPAK | ||
| FQD19N10TM,FQD19N10 | Neu und Original |