GT30J121

GT30J121(Q) vs GT30J121 vs GT30J121,GT30J322

 
PartNumberGT30J121(Q)GT30J121GT30J121,GT30J322
DescriptionIGBT Transistors 600V/30A DIS30A, 600V, N-CHANNEL IGBT
ManufacturerToshibaTOSHIBA-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-3P--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C30 A--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesGT30J121--
Continuous Collector Current Ic Max30 A--
Height19 mm--
Length15.9 mm--
Width4.8 mm--
BrandToshiba--
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Unit Weight0.238311 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
GT30J121(Q) IGBT Transistors 600V/30A DIS
GT30J121 30A, 600V, N-CHANNEL IGBT
GT30J121,GT30J322 Neu und Original
GT30J121(Q) IGBT Transistors 600V/30A DIS
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