HGT

HGTG30N60A4 vs HGTG30N60A4D vs HGTG27N120BN

 
PartNumberHGTG30N60A4HGTG30N60A4DHGTG27N120BN
DescriptionIGBT Transistors 600V N-Channel IGBT SMPS SeriesIGBT Transistors 600V N-Channel IGBT SMPS SeriesIGBT Transistors 72A 1200V NPT Series N-Ch IGBT
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSEEY
TechnologySiSiSi
Package / CaseTO-247-3TO-247-3TO-247-3
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V600 V1200 V
Collector Emitter Saturation Voltage1.8 V1.8 V2.45 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C75 A75 A72 A
Pd Power Dissipation463 W463 W500 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesHGTG30N60A4HGTG30N60A4DHGTG27N120BN
PackagingTubeTubeTube
Continuous Collector Current Ic Max75 A75 A72 A
Height20.82 mm20.82 mm20.82 mm
Length15.87 mm15.87 mm15.87 mm
Width4.82 mm4.82 mm4.82 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Continuous Collector Current75 A75 A72 A
Gate Emitter Leakage Current+/- 250 nA+/- 250 nA+/- 250 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity450450450
SubcategoryIGBTsIGBTsIGBTs
Part # AliasesHGTG30N60A4_NLHGTG30N60A4D_NL-
Unit Weight0.225401 oz0.225401 oz0.225401 oz
  • Beginnen mit
  • HGT 430
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HGTG30N60A4 IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG30N60B3 IGBT Transistors 600V N-Channel IGBT UFS Series
HGTG40N60A4 IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG30N60B3D IGBT Transistors 600V IGBT UFS N-Channel
HGTG30N60A4D IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG30N60C3D IGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para
HGTG27N120BN IGBT Transistors 72A 1200V NPT Series N-Ch IGBT
ON Semiconductor
ON Semiconductor
HGTG30N60A4D IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG30N60C3D IGBT 600V 63A 208W TO247
HGTG30N60B3D IGBT 600V 60A 208W TO247
HGTG30N60A4 IGBT 600V 75A 463W TO247
HGTG30N60B3 IGBT Transistors 600V N-Channel IGBT UFS Series
HGTG27N120BN IGBT 1200V 72A 500W TO247
HGTG20N60RUFD Neu und Original
HGTG27N120BG Neu und Original
HGTG27N120BN G27N120BN Neu und Original
HGTG27N120BN(72A1200V) Neu und Original
HGTG27N120BND Neu und Original
HGTG30B60A4D Neu und Original
HGTG30N100 Neu und Original
HGTG30N120 Neu und Original
HGTG30N120C3D Neu und Original
HGTG30N120CND Neu und Original
HGTG30N60A Neu und Original
HGTG30N60A4 G30N60A4 Neu und Original
HGTG30N60A4D G30N60A4D Neu und Original
HGTG30N60A4D,30N60A4D Neu und Original
HGTG30N60A4D,G30N60A4D,G Neu und Original
HGTG30N60A4D,HGTG30N60A4 Neu und Original
HGTG30N60A4D-NL Neu und Original
HGTG30N60B3D G30N60B3D Neu und Original
HGTG30N60B3DNL Neu und Original
HGTG30N60B3D_R4731 Neu und Original
HGTG30N60B5 Neu und Original
HGTG30N6S2D Neu und Original
HGTG40N60 Neu und Original
HGTG40N60A Neu und Original
HGTG30N60B3 G30N60B3 Neu und Original
HGTG30N60A4D-- Neu und Original
HGTG30N60B3D_Q IGBT Transistors 600V IGBT UFS N-Channel
HGTG24N60D1 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG24N60D1D Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG27N60C3R Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG30N60B3_NL - Bulk (Alt: HGTG30N60B3_NL)
HGTG30N60C3 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG30N60C3D_NL - Bulk (Alt: HGTG30N60C3D_NL)
HGTG32N60E2 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG34N100E2 Insulated Gate Bipolar Transistor, 55A I(C), 1000V V(BR)CES, N-Channel, TO-247
HGTG30N120CN Neu und Original
HGTG30N60 Neu und Original
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