 |  | | |
| PartNumber | HGTD1N120BNS9A | HGT1S7N60C3DS9A | HGT1S7N60C3DS |
| Description | IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series | IGBT Transistors 14a 600V N-Ch IGBT UFS Series | IGBT Transistors 7A 600V TF=275NS |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Package / Case | TO-252AA-3 | TO-263AB-3 | TO-263AB-3 |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1200 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 2.5 V | 1.6 V | 1.6 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 5.3 A | 14 A | 14 A |
| Pd Power Dissipation | 60 W | 60 W | 60 W |
| Minimum Operating Temperature | - 55 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | HGTD1N120BNS | - | - |
| Packaging | Reel | Reel | Tube |
| Continuous Collector Current Ic Max | 5.3 A | 14 A | 14 A |
| Height | 2.3 mm | 4.83 mm | 4.83 mm |
| Length | 6.6 mm | 10.67 mm | 10.67 mm |
| Width | 6.1 mm | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Continuous Collector Current | 5.3 A | 14 A | 14 A |
| Gate Emitter Leakage Current | +/- 250 nA | +/- 250 nA | +/- 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 2500 | 800 | 50 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.009184 oz | 0.056438 oz | 0.056438 oz |
| Part # Aliases | - | HGT1S7N60C3DS9A_NL | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTD1N120BNS9A | IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series | |
| HGT1S7N60C3DS9A | IGBT Transistors 14a 600V N-Ch IGBT UFS Series | ||
| HGT1S7N60C3DS | IGBT Transistors 7A 600V TF=275NS | ||
ON Semiconductor |
HGTD1N120BNS9A | IGBT 1200V 5.3A 60W TO252AA | |
| HGT1S7N60C3DS | IGBT 600V 14A 60W TO263AB | ||
| HGT1S7N60C3DS9A | IGBT 600V 14A 60W TO263AB | ||
| HGTD3N60C3S9A | IGBT 600V 6A 33W TO252AA | ||
| HGT1S7N60B3DS | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB | ||
| HGT1S7N60B3DS9A | IGBT Transistors 14A 600V UFS N-Ch | ||
| HGT1S7N60B3S | Neu und Original | ||
| HGT1S7N60C3D | IGBT Transistors Optocoupler Phototransisto | ||
| HGT1Y40N60B3D | Neu und Original | ||
| HGT20N60A4D | Neu und Original | ||
| HGT30N60 | Neu und Original | ||
| HGT3126 | Neu und Original | ||
| HGT3FS330KG3BW | Neu und Original | ||
| HGT4522 | Neu und Original | ||
| HGT4E20N50A4DS | Neu und Original | ||
| HGT4E20N60A4DS | IGBT Transistors TO-268 | ||
| HGT4E30N60B3S | Neu und Original | ||
| HGT4E30N60C3S | Neu und Original | ||
| HGT5800 | Neu und Original | ||
| HGT5800A | Neu und Original | ||
| HGT5A40N60A4D | Neu und Original | ||
| HGT95800A | Neu und Original | ||
| HGTA321609-900 | Neu und Original | ||
| HGTA32N60E2 | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MO-093AA | ||
| HGTB10N120BN 10N120BN | Neu und Original | ||
| HGTB12N60D1C | Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel, TS-001AA | ||
| HGTB5N120 | Neu und Original | ||
| HGTD10N40F1 | Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-251AA | ||
| HGTD10N40F1S | Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA | ||
| HGTD10N50F1 | Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA | ||
| HGTD10N50F1S | Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA | ||
| HGTD14N05B | Neu und Original | ||
| HGTD1N120B | Neu und Original | ||
| HGTD1N120BNS | IGBT Transistors NPTPIGBT TO252 5.3A 1200V | ||
| HGTD1N120BNS 1N120B | Neu und Original | ||
| HGTD2N120BNS | Neu und Original | ||
| HGTD2N120CNS | Neu und Original | ||
| HGTD3N60A4S | 600V, SMPS Series N-Channel IGBT - Bulk (Alt: HGTD3N60A4S) | ||
| HGTD3N60B3S | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA | ||
| HGTD3N60C3 | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA | ||
| HGTD3N60C3D | Neu und Original | ||
| HGTD3N60C3S | - Bulk (Alt: HGTD3N60C3S) | ||
| HGTD6N40E1 | Neu und Original | ||
| HGTD6N40E1S | - Bulk (Alt: HGTD6N40E1S) | ||
| HGTD6N50E1 | - Bulk (Alt: HGTD6N50E1) | ||
| HGTD6N50E1S | Neu und Original | ||
| HGTD6N50E1S9A | Neu und Original |