IPB049NE7N3 stock, IPB049NE7N3, IPB049NE7N3 G


PartNumber	IPB049NE7N3 G	IPB049NE7N3GATMA1
Description	MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3	MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TO-263-3	TO-263-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	75 V	75 V
Id Continuous Drain Current	80 A	80 A
Rds On Drain Source Resistance	4.4 mOhms	4.4 mOhms
Vgs th Gate Source Threshold Voltage	2.3 V	2.3 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	68 nC	68 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	150 W	150 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Reel	Reel
Height	4.4 mm	4.4 mm
Length	10 mm	10 mm
Series	OptiMOS 3	OptiMOS 3
Transistor Type	1 N-Channel	1 N-Channel
Width	9.25 mm	9.25 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	52 S	52 S
Fall Time	8 ns	8 ns
Product Type	MOSFET	MOSFET
Rise Time	11 ns	11 ns
Factory Pack Quantity	1000	1000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	30 ns	30 ns
Typical Turn On Delay Time	14 ns	14 ns
Part # Aliases	IPB049NE7N3GATMA1 IPB49NE7N3GXT SP000641752	G IPB049NE7N3 IPB49NE7N3GXT SP000641752
Unit Weight	0.139332 oz	0.139332 oz

Search Part Number : "IPB049NE7N3", Match & Start with "IPB049NE7N3" - Total : 6

Hersteller	Teil #	Beschreibung
Infineon Technologies	IPB049NE7N3 G	MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
	IPB049NE7N3GATMA1	MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
	IPB049NE7N3GATMA1	MOSFET N-CH 75V 80A TO263-3
	IPB049NE7N3 G	Darlington Transistors MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
	IPB049NE7N3	Neu und Original
	IPB049NE7N3G	75V,80A,N Channel Power MOSFET

IPB049NE7N3