 | |  | |
| PartNumber | IPB065N03LGATMA1 | IPB065N10N3GATMA1 | IPB065N06L G |
| Description | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | MOSFET MV POWER MOS | MOSFET N-CH 60V 80A D2PAK |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 100 V | - |
| Id Continuous Drain Current | 50 A | 80 A | - |
| Rds On Drain Source Resistance | 5.4 mOhms | 5.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 11 nC | 64 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 56 W | 150 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 34 S | 50 S | - |
| Fall Time | 3.4 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 4.2 ns | 37 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 21 ns | 37 ns | - |
| Typical Turn On Delay Time | 5.5 ns | 19 ns | - |
| Part # Aliases | G IPB065N03L IPB65N3LGXT SP000254709 | G IPB065N10N3 SP001232588 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB065N03LGATMA1 | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | |
| IPB065N15N3GATMA1 | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | ||
| IPB065N10N3GATMA1 | MOSFET MV POWER MOS | ||
| IPB065N15N3 G | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | ||
| IPB065N10N3GATMA1 | MOSFET N-CH TO263-3 | ||
| IPB065N03LGATMA1 | MOSFET N-CH 30V 50A TO-263-3 | ||
| IPB065N06L G | MOSFET N-CH 60V 80A D2PAK | ||
| IPB065N15N3GATMA1 | MOSFET N-CH 150V 130A TO263-7 | ||
| IPB065N15N3GE8187ATMA1 | MOSFET N-CH 150V 130A TO263-7 | ||
| IPB065N15N3 G | RF Bipolar Transistors MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | ||
| IPB065N10N3GATMA1-CUT TAPE | Neu und Original | ||
| IPB065N15N3GATMA1-CUT TAPE | Neu und Original | ||
| IPB065N15N3GXT | Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB065N15N3GATMA1) | ||
| IPB065N15N3GE818XT | MOSFET | ||
| IPB065N03L G | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | ||
| IPB065N06L | Neu und Original | ||
| IPB065N15N | Neu und Original | ||
| IPB065N15N3GE8197ATMA1 | (Alt: SP001227194) | ||
| IPB065N15N3GS | Neu und Original | ||
| IPB065N03LG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB065N15N3 | Neu und Original | ||
| IPB065N15N3G | Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263 | ||
| IPB065N06LG | Power Field-Effect Transistor, 80A I(D), 60V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |