PartNumber | IPB50N10S3L-16 | IPB50N12S3L15ATMA1 | IPB50N10S3L16ATMA1 |
Description | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | MOSFET N-CHANNEL 100+ | MOSFET N-CH 100V 50A TO263-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 50 A | - | - |
Rds On Drain Source Resistance | 15.4 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 64 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 100 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Series | OptiMOS-T | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 5 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 5 ns | - | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 28 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Part # Aliases | IPB50N10S3L16ATMA1 IPB5N1S3L16XT SP000386183 | IPB50N12S3L-15 SP001398602 | - |
Unit Weight | 0.139332 oz | 0.077603 oz | - |
Moisture Sensitive | - | Yes | - |