IPB50N

IPB50N10S3L-16 vs IPB50N12S3L15ATMA1 vs IPB50N10S3L16ATMA1

 
PartNumberIPB50N10S3L-16IPB50N12S3L15ATMA1IPB50N10S3L16ATMA1
DescriptionMOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-TMOSFET N-CHANNEL 100+MOSFET N-CH 100V 50A TO263-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance15.4 mOhms--
Vgs th Gate Source Threshold Voltage2.4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge64 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation100 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOS--
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS-T--
Transistor Type1 N-Channel--
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time5 ns--
Product TypeMOSFETMOSFET-
Rise Time5 ns--
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time28 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesIPB50N10S3L16ATMA1 IPB5N1S3L16XT SP000386183IPB50N12S3L-15 SP001398602-
Unit Weight0.139332 oz0.077603 oz-
Moisture Sensitive-Yes-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPB50N10S3L-16 MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
IPB50N12S3L15ATMA1 MOSFET N-CHANNEL 100+
IPB50N10S3L16ATMA1 MOSFET N-CH 100V 50A TO263-3
IPB50N12S3L15ATMA1 MOSFET N-CHANNEL_100+
IPB50N06 Neu und Original
IPB50N06NG Neu und Original
IPB50N10S3L16 MOSFET, AEC-Q101, N-CH, 100V, TO-263
IPB50N12S3L-15 Neu und Original
IPB50N10S3L-16 Darlington Transistors MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
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