 | |  | |
| PartNumber | IPB60R600P6ATMA1 | IPB60R600C6ATMA1 | IPB60R600CPATMA1 |
| Description | MOSFET LOW POWER_PRICE/PERFORM | MOSFET N-Ch 650V 7.3A D2PAK-2 CoolMOS C6 | MOSFET N-CH 600V 6.1A TO263 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | CoolMOS P6 | CoolMOS C6 | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPB60R600P6 SP001313874 | IPB60R600C6ATMA1 SP000660626 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Id Continuous Drain Current | - | 7.3 A | - |
| Rds On Drain Source Resistance | - | 540 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 20.5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 63 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 13 ns | - |
| Rise Time | - | 9 ns | - |
| Typical Turn Off Delay Time | - | 80 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB60R600P6ATMA1 | MOSFET LOW POWER_PRICE/PERFORM | |
| IPB60R600C6ATMA1 | MOSFET N-CH 600V 7.3A TO263 | ||
| IPB60R600P6ATMA1 | MOSFET N-CH TO263-3 | ||
| IPB60R600CPATMA1 | MOSFET N-CH 600V 6.1A TO263 | ||
Infineon Technologies |
IPB60R600C6ATMA1 | MOSFET N-Ch 650V 7.3A D2PAK-2 CoolMOS C6 | |
| IPB60R600C6 | Darlington Transistors MOSFET N-Ch 650V 7.3A D2PAK-2 CoolMOS C6 | ||
| IPB60R600CP | IGBT Transistors MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP |