| PartNumber | IPD042P03L3GATMA1 | IPD042P03L3GBTMA1 |
| Description | MOSFET SMALL SIGNAL+P-CH | MOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 70 A | 70 A |
| Rds On Drain Source Resistance | 6.8 mOhms | 3.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
| Vgs Gate Source Voltage | 4.5 V | 20 V |
| Qg Gate Charge | 131 nC | 175 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 150 W | 150 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 65 S | 65 S |
| Fall Time | 22 ns | 22 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 167 ns | 167 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 89 ns | 89 ns |
| Typical Turn On Delay Time | 21 ns | 21 ns |
| Part # Aliases | G IPD042P03L3 SP001127836 | G IPD042P03L3 IPD42P3L3GXT SP000473922 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Series | - | XPD042P03 |