IPD09N03L

IPD09N03LA G vs IPD09N03L vs IPD09N03LA

 
PartNumberIPD09N03LA GIPD09N03LIPD09N03LA
DescriptionMOSFET N-Ch 25V 50A DPAK-2MOSFET Transistor, N-Channel, TO-252AA
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance14.8 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation63 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min46 S / 23 S--
Fall Time3.4 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time5.6 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD09N03LA G MOSFET N-Ch 25V 50A DPAK-2
IPD09N03L Neu und Original
IPD09N03LA MOSFET Transistor, N-Channel, TO-252AA
IPD09N03LA(50A 25V) Neu und Original
IPD09N03LA-G Neu und Original
IPD09N03LAG 50A, 25V, 0.0148ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
IPD09N03LAG-09N03LA Neu und Original
IPD09N03LB Neu und Original
IPD09N03LBG Neu und Original
IPD09N03LG Neu und Original
Infineon Technologies
Infineon Technologies
IPD09N03LA G MOSFET N-CH 25V 50A DPAK
IPD09N03LB G MOSFET N-CH 30V 50A DPAK
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