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| PartNumber | IPD80R1K4P7ATMA1 | IPD80R1K4P7ATMA1-CUT TAPE | IPD80R1K4P7 |
| Description | MOSFET | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 1.4 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 10 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 32 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | CoolMOS P7 | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | IPD80R1K4P7 SP001422564 | - | - |
| Unit Weight | 0.011993 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD80R1K4P7ATMA1 | MOSFET | |
| IPD80R1K4P7ATMA1 | MOSFET N-CH 800V 4A DPAK | ||
| IPD80R1K4P7ATMA1-CUT TAPE | Neu und Original | ||
| IPD80R1K4P7 | Neu und Original |