 | | | |
| PartNumber | IPS65R1K0CE | IPS65R1K0CE . | IPS65R1K0CE(1) |
| Description | |||
| Manufacturer | Infineon Technologies | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Packaging | Tube | - | - |
| Part Aliases | IPS65R1K0CE SP001276048 | - | - |
| Unit Weight | 0.012102 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | CoolMOS | - | - |
| Package Case | TO-251-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 37 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Fall Time | 13.6 ns | - | - |
| Rise Time | 5.2 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.3 A | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Rds On Drain Source Resistance | 1 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 41 ns | - | - |
| Typical Turn On Delay Time | 6.6 ns | - | - |
| Qg Gate Charge | 15.3 nC | - | - |
| Channel Mode | Enhancement | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPS65R1K0CEAKMA2 | MOSFET CONSUMER | |
| IPS65R1K0CEAKMA2 | CONSUMER - Rail/Tube (Alt: IPS65R1K0CEAKMA2) | ||
| IPS65R1K0CEAKMA1 | MOSFET N-CH 650V 4.3A TO-251-3 | ||
| IPS65R1K0CE | Neu und Original | ||
| IPS65R1K0CE . | Neu und Original | ||
| IPS65R1K0CE(1) | Neu und Original | ||
| IPS65R1K0CEAKMA1 , 2SJ16 | Neu und Original |