IRF

IRF1503STRLPBF vs IRF1503STRRPBF vs IRF1503SPBF

 
PartNumberIRF1503STRLPBFIRF1503STRRPBFIRF1503SPBF
DescriptionMOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nCMOSFET N-CH 30V 75A D2PAKRF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current75 A--
Rds On Drain Source Resistance3.3 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge130 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation200 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReel-Tube
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min75 S--
Fall Time48 ns-48 ns
Product TypeMOSFET--
Rise Time130 ns-130 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time59 ns-59 ns
Typical Turn On Delay Time17 ns-17 ns
Part # AliasesSP001550938--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--200 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--190 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--3.3 mOhms
Qg Gate Charge--130 nC
  • Beginnen mit
  • IRF 8615
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
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IRF1503STRLPBF MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
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IRF1503STRLPBF RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
Infineon / IR
Infineon / IR
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Infineon Technologies
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