PartNumber | IRF7350PBF | IRF7350TRPBF | IRF7351PBF |
Description | MOSFET 100V DUAL N- & P- CH HEXFET | MOSFET MOSFT DUAL N/PCh 100V 2.1A | MOSFET 2N-CH 60V 8A 8-SOIC |
Manufacturer | Infineon | Infineon | Infineon Technologies |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 2.1 A | 2.1 A | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 19 nC, 21 nC | 19 nC | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 2 W | 2 W | - |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | - | - |
Packaging | Tube | Reel | Tube Alternate Packaging |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | 2 N-Channel |
Type | Power MOSFET | - | - |
Width | 3.9 mm | 3.9 mm | - |
Brand | Infineon / IR | Infineon / IR | - |
Forward Transconductance Min | 2.4 S, 1.1 S | - | - |
Fall Time | 20 ns, 40 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 11 ns, 13 ns | - | - |
Factory Pack Quantity | 4085 | 4000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 35 ns, 30 ns | - | - |
Typical Turn On Delay Time | 6.7 ns, 25 ns | - | - |
Part # Aliases | SP001554224 | SP001563632 | - |
Unit Weight | 0.019048 oz | 0.019048 oz | 0.019048 oz |
Series | - | - | HEXFETR |
Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-SO |
FET Type | - | - | 2 N-Channel (Dual) |
Power Max | - | - | 2W |
Drain to Source Voltage Vdss | - | - | 60V |
Input Capacitance Ciss Vds | - | - | 1330pF @ 30V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 8A |
Rds On Max Id Vgs | - | - | 17.8 mOhm @ 8A, 10V |
Vgs th Max Id | - | - | 4V @ 50μA |
Gate Charge Qg Vgs | - | - | 36nC @ 10V |
Pd Power Dissipation | - | - | 2 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 8 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 17.8 mOhms |
Qg Gate Charge | - | - | 24 nC |