PartNumber | IXFT150N20T | IXFT150N17T2 | IXFT150N25X3HV |
Description | MOSFET Trench HiperFETs Power MOSFETs | MOSFET DISCMSFT NCHTRENCHGATE-GEN2 | MOSFET DISCMSFT NCHULTRJNCTN X3CLASS |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-268-3 | TO-268-3 | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 175 V | - |
Id Continuous Drain Current | 150 A | 150 A | - |
Rds On Drain Source Resistance | 15 mOhms | 9.7 mOhms | - |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | Tube | Tube |
Series | IXFT150N20 | - | - |
Brand | IXYS | IXYS | IXYS |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.229281 oz | 0.141096 oz | - |
RoHS | - | Y | Y |
Number of Channels | - | 1 Channel | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 233 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 880 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 100 S | - |
Fall Time | - | 20 ns | - |
Rise Time | - | 16 ns | - |
Typical Turn Off Delay Time | - | 50 ns | - |
Typical Turn On Delay Time | - | 32 ns | - |